BSS127S-7 Datasheet BSS127S-7, BSS127SSN-7 | P1-P3

BSS127

Document number: DS35476 Rev. 7 - 2

1 of 6

www.diodes.com

March 2016

BSS127

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Product Summary

BV

DSS

R

DS(ON)

Package

I

D

T

A

= +25°C

600V

160Ω @ V

GS

= 10V

SC59

SOT23

70mA

Description

This new generation uses advanced planar technology MOSFET,

provide excellent high voltage and fast switchi

ng, making it ideal for

small-signal and level shift applications.

Applications

• Motor Control

• Backlighting

• DC-DC Converters

• Power Management Functions

Features

• Low Input Capacitance

• High BV

DSS

Rating for Power Application

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC59 / SOT23

• Case Material: Molded Plastic “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Annealed over Copper Leadframe

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

BSS127SSN-7

SC59

3000/Tape & Reel

BSS127S-7

SOT23

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2013

2014

2015

2016

2017

2018

2019

Code

A

B

C

D

E

F

G

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

e3

SC59

Top View

Equivalent Circuit

Top View

Source

Gate

Drain

D

G

S

SOT23

K28 = Product Type Marking Code

YM =

Date Code Marking

Y = Year (ex:

D = 2016)

M = Month (ex: 9 = September)

K28

YM

K29 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex:

D = 2016)

M = Month (ex: 9 = September)

SOT23

SC59

K29

YM

BSS127

Document number: DS35476 Rev. 7 - 2

2 of 6

www.diodes.com

March 2016

BSS127

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

600

V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain Current (Note 5) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

50

40

mA

Continuous Drain Current (Note 6) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

70

55

mA

Continuous Drain Current (Note 5) V

GS

= 5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

45

35

mA

Continuous Drain Current (Note 6) V

GS

= 5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

65

50

mA

Pulsed Drain Current @ T

SP

= +25°C (Note 7)

I

DM

0.16

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation, @T

A

= +25°C (Note 5)

P

D

0.61

W

Thermal Resistance, Junction to Ambient @ T

A

= +25°C (Note 5)

R

θJA

204

°C/W

Power Dissipation, @T

A

= +25°C (Note 6)

P

D

1.25

W

Thermal Resistance, Junction to Ambient @ T

A

= +25°C (Note 6)

R

θJA

100

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

600

—

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

—

0.1

µA

V

DS

= 600V, V

GS

= 0V

Gate-Body Leakage

I

GSS

—

±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(TH)

3

—

4.5

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS(ON)

—

80

160

Ω

V

GS

= 10V, I

D

= 16mA

—

95

190

V

GS

= 5.0V, I

D

= 16mA

Forward Transfer Admittance

|Y

fs

|

—

76

—

mS

V

DS

= 10V, I

D

= 16mA

Diode Forward Voltage

V

SD

—

1.5

V

GS

= 0V, I

S

= 16mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

—

21.8

—

pF

V

DS

= 25V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss

—

2.2

—

Reverse Transfer Capacitance

C

rss

—

0.3

—

Total Gate Charge

Q

g

—

1.08

—

nC

V

GS

= 10V, V

DD

= 300V,

I

D

= 0.01A

Gate-Source Charge

Q

gs

—

0.08

—

Gate-Drain Charge

Q

gd

—

0.50

—

Turn-On Delay Time

t

D(ON)

—

5.0

—

ns

V

DD

= 300V, V

GS

= 10V,

R

GEN

= 6Ω,

I

D

= 10mA

Turn-On Rise Time

t

R

—

7.2

—

ns

Turn-Off Delay Time

t

D(OFF)

—

28.7

—

ns

Turn-Off Fall Time

t

F

—

168

—

ns

Reverse Recovery Time

t

RR

—

131

—

ns

V

R

=300V, I

F

=0.016A,

di/dt = 100A/µs

Reverse Recovery Charge

Q

RR

—

32

—

nC

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.

7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

BSS127

Document number: DS35476 Rev. 7 - 2

3 of 6

www.diodes.com

March 2016

BSS127

V , DRAIN -SOURCE VOLTAGE(V)

Figure 1 Typical Output Characteristics

DS

0 2 4 6 8 10

I , DRAIN CURRENT

D

0.030

0.025

0.020

0.015

0.010

0.005

0.000

V , GATE SOURCE VOLTAGE(V)

Figure 2 Typical Transfer Characteristics

GS

I , DRAIN CURRENT (mA)

D

1

10

100

1 2 3 4 5

V = 10V

DS

I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Temperature

D

R ,DRAIN-SOURCE ON-RESISTANCE( )

DS(ON)

Ω

10

100

1000

0 5 10 15 20 25 30

T =-55 C

A

°

T =25

A

°

C

T =85

A

°

C

T =125

A

°

C

T =150

A

°

C

V = 10V

GS

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 4 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE

(Normalized)

DS(ON)

0

50

100

150

200

250

I ,

SOURCE CURRENT (A)

S

V , SOURCE-DRAIN VOLTAGE (V)

Figure 6 Diode Forward Voltage vs. Current

SD

0.1 0.3 0.5 0.7 0.9 1.1

100

T = 25 C

A

°

T = 125 C

A

°

T = 150 C

A

°

T = -55 C

A

°

T = 85 C

A

°

10

1

3

3.2

3.4

3.6

3.8

4

4.2

4.4

4.6

4.8

5

-50 -25 0 25 50 75 100 125 150

V

GS(TH)

, GATE THRESHOLD VOLTAGE (V)

T

A

, AMBIENT TEMPERATURE (℃)

Figure 5. Gate Threshold Variation vs. Ambient

Temperature

I

D

= 250μA

I

D

, DRAIN CURRENT (A)

BSS127S-7

BSS127S-7

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