IDT5V41066
4 OUTPUT PCIE GEN1/2 SYNTHESIZER
IDT®
4 OUTPUT PCIE GEN1/2 SYNTHESIZER 9
IDT5V41066 REV D 112211
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the IDT5V41066. These ratings are stress
ratings only. Functional operation of the device at these or any other conditions above those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for
extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended
operating temperature range.
DC Electrical Characteristics
Unless stated otherwise, VDD = 3.3 V ±5%, Ambient Temperature -40 to +85° C
1. Single edge is monotonic when transitioning through region.
2. Inputs with pull-ups/-downs are not included.
Item Rating
Supply Voltage, VDD, VDDA 5.5 V
All Inputs and Outputs -0.5 V to VDD+0.5 V
Ambient Operating Temperature (commercial) 0 to +70° C
Ambient Operating Temperature (industrial) -40 to +85° C
Storage Temperature -65 to +150° C
Junction Temperature 125° C
Soldering Temperature 260° C
ESD Protection (Input) 2000 V min. (HBM)
Parameter Symbol Conditions Min. Typ. Max. Units
Supply Voltage V 3.135 3.3 3.465
Input High Voltage
1
V
IH
2.2 VDD +0.3 V
Input Low Voltage
1
V
IL
VSS-0.3 0.8 V
Input Leakage Current
2
I
IL
0 < Vin < VDD -5 5 μA
Operating Supply Current
@100 MHz
I
DD
R
S
=33Ω, R
P
=50Ω, C
L
=2 pF 115 125 mA
I
DDOE
OE =Low 42 48 mA
I
DDPD
No load, PD =Low 350 500 μA
Input Capacitance C
IN
Input pin capacitance 7 pF
Output Capacitance C
OUT
Output pin capacitance 6 pF
X1, X2 Capacitance C
INX
5pF
Pin Inductance L
PIN
5nH
Output Impedance Zo CLK outputs 3.0 kΩ
Pull-up Resistance R
PUP
OE, SEL, PD pins 110 kΩ
