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MGSF2N02ELT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2002
October, 2016 − Rev. 5
1 Publication Order Number:
MGSF2N02EL/D
MGSF2N02EL,
MVSF2N02EL
Power MOSFET
2.8 Amps, 20 Volts, N−Channel SOT−23
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
Features
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• I
DSS
Specified at Elevated Temperature
• AEC Q101 Qualified and PPAP Capable − MVSF2N02EL
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 Vdc
Gate−to−Source Voltage − Continuous V
GS
± 8.0 Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Single Pulse (t
p
= 10 ms)
I
D
I
DM
2.8
5.0
A
Total Power Dissipation @ T
A
= 25°C P
D
1.25 W
Operating and Storage Temperature
Range
T
J
, T
stg
− 55 to
150
°C
Thermal Resistance
Junction−to−Ambient (Note 1)
Thermal Resistance
Junction−to−Ambient (Note 2)
R
q
JA
100
300
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
D
G
S
N−Channel
SOT−23
CASE 318
STYLE 21
MARKING
DIAGRAM
PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
2.8 A, 20 V
R
DS(on)
= 85 mW (max)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
NT MG
G
xxx = Specific Device Code
M = Date Code
G = Pb−Free Package
www.onsemi.com
MGSF2N02EL, MVSF2N02EL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 10 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
20
−
−
22
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Source Leakage Current (V
GS
= $ 8.0 Vdc, V
DS
= 0 Vdc) I
GSS
− − "100 nA
ON CHARACTERISTICS (Note 3)
Gate−Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
0.5
−
−
−2.3
1.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance
(V
GS
= 4.5 Vdc, I
D
= 3.6 A)
(V
GS
= 2.5 Vdc, I
D
= 3.1 A)
R
DS(on)
−
−
78
105
85
115
mW
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5.0 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
− 150 −
pF
Output Capacitance C
oss
− 130 −
Transfer Capacitance C
rss
− 45 −
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 16 Vdc, I
D
= 2.8 Adc,
V
gs
= 4.5 V, R
G
= 2.3 W)
t
d(on)
− 6.0 −
ns
Rise Time t
r
− 95 −
Turn−Off Delay Time t
d(off)
− 28 −
Fall Time t
f
− 125 −
Gate Charge
(V
DS
= 16 Vdc, I
D
= 1.75 Adc,
V
GS
= 4.0 Vdc) (Note 3)
Q
T
− 3.5 −
nC
Q
gs
− 0.6 −
Q
gd
− 1.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Voltage
(I
S
= 1.0 Adc, V
GS
= 0 Vdc) (Note 3)
V
SD
−
−
0.76
−
1.2
−
V
Reverse Recovery Time
(I
S
= 1.0 Adc, V
GS
= 0 Vdc,
dl
S
/ dt = 100 A/ms) (Note 3)
t
rr
− 104 −
ns
t
a
− 42 −
t
b
− 62 −
Reverse Recovery Stored Charge Q
RR
− 0.20 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Device Package Shipping
†
MGSF2N02ELT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MVSF2N02ELT1G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*MVSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
MGSF2N02EL, MVSF2N02EL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0
2
4
6
8
0 0.5 1 1.5 2 2.5
V
GS
= 3 V
V
GS
= 2.2 V
V
GS
= 2.0 V
V
GS
= 1.8 V
V
GS
= 1.6 V
T
J
= 25°C
V
GS
= 2.6 V
V
GS
= 7 V
V
GS
= 5 V
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5
3
T
J
= 55°C
T
J
= 100°C
V
DS
w 10 V
0.02
0.04
0.06
0.08
0.10
0.12
02468
T
J
= 25°C
0
0.1
0.2
0.3
4567
8
T
J
= 25°C
V
GS
= 2.5 V
0.6
0.9
1.2
1.5
1.8
−50 −25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 3.6 A
V
GS
= 4.5 V
10
100
1000
10000
4 8 12 16 2
0
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Gate Voltage
Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage
Current vs. Voltage
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
I
D
= 3.6 A
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V) −I
D
, DRAIN CURRENTS (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 1.2 V
P1-P3P4-P5

MGSF2N02ELT1G

Mfr. #:
Buy MGSF2N02ELT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SOT23 20V 2.8A 85mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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