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STPS1L40M

P1-P3P4-P6
®
1/6
Table 1: Main Product Characteristics
I
F(AV)
1 A
V
RRM
40 V
T
j
(max)
150°C
V
F
(max)
0.40 V
STPS1L40M
LOW DROP POWER SCHOTTKY RECTIFIER
REV. 3
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 40 V
I
F(RMS)
RMS forward voltage 2 A
I
F(AV)
Average forward current
T
c
= 140°C δ = 0.5
1A
I
FSM
Surge non repetitive forward current 10 ms sinusoidal 50 A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C 1200 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature * 150 °C
dV/dt
Critical rate of rise of reverse voltage (rated V
R
, T
j
= 25°C)
10000 V/µs
* : thermal runaway condition for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a
–()
-------------------------->
C
A
STmite
(DO216-AA)
September 2004
FEATURES AND BENEFITS
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop for higher efficiency
and extented battery life
■ Low thermal resistance
■ Avalanche capability specified
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
Table 2: Order Code
Part Number Marking
STPS1L40M 1L4
STPS1L40M
2/6
Table 4: Thermal Resistance
* Mounted with minimum recommended pad size, PC board FR4.
Table 5: Static Electrical Characteristics
Pulse test: * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.34 x I
F(AV)
+ 0.07 I
F
2
(RMS)
Symbol Parameter Value Unit
R
th(j-c)
*
Junction to case 20 °C/W
R
th(j-l)
* Junction to ambient
250
°C/W
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
*
Reverse leakage current
T
j
= 25°C
V
R
= V
RRM
0.021 0.063
mA
T
j
= 85°C
1.3 4.0
T
j
= 25°C V
R
= 20V
0.007 0.021
T
j
= 85°C
0.49 1.5
V
F
*
Forward voltage drop
T
j
= 25°C
I
F
= 1A
0.40 0.46
V
T
j
= 85°C
0.35 0.40
T
j
= 25°C
I
F
= 3A
0.52 0.60
T
j
= 85°C
0.50 0.58
Figure 1: Conduction losses versus average
current
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
δ
=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
P (W)
F(AV)
I (A)
F(AV)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 25 50 75 100 125 150
I (A)
F(AV)
R=R
th(j-a) th(j-c)
R =270°C/W
th(j-a)
T (°C)
amb
STPS1L40M
3/6
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
Figure 8: Reverse leakage current versus
junction temperature (typical values)
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
0
2
4
6
8
10
12
14
16
18
20
1.E-03 1.E-02 1.E-01 1.E+00
I
M
t
δ
=0.5
I (A)
M
t(s)
T =25°C
C
T =75°C
C
T =125°C
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ
=tp/T
tp
Z/R
th(j-c) th(j-c)
t (s)
p
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 5 10 15 20 25 30 35 40
I (mA)
R
V (V)
R
T =125°C
j
T =150°C
j
T =100°C
j
T =50°C
j
T =25°C
j
T =75°C
j
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 25 50 75 100 125 150
I (mA)
R
T (°C)
j
V =40V
R
P1-P3P4-P6

STPS1L40M

Mfr. #:
Buy STPS1L40M
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 1.0 Amp 40 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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