OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SEP8507-001

P1-P3P4-P4
GaAs Infrared Emitting Diode
SEP8507
DESCRIPTION
FEATURES
End-emitting plastic package
•
135¡ (nominal) beam angle
•
935 nm wavelength
•
Low profile for design flexibility
•
Mechanically and spectrally matched to
SDP8407 phototransistor
•
The SEP8507 is a gallium arsenide infrared emitting
diode molded in an end-emitting red plastic package.
The chip is positioned to emit radiation from the top of
the package. Lead lengths are staggered to provide a
simple method of polarity identification.
DIM_009.cdr
INFRA-18.TIF
OUTLINE DIMENSIONS
3 plc decimals
±0.008(0.20)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
44
GaAs Infrared Emitting Diode
SEP8507
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
60 mA
Power Dissipation
100 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.66 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
45
GaAs Infrared Emitting Diode
SEP8507
Radiant Intensity vs
Angular Displacement
gra_032.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-160 -120 -80 -40 0 +40 +80 +120 +160
Fig. 1 Radiant Intensity vs
Forward Current
gra_028.ds4
Forward current - mA
N
o
r
m
a
l
i
z
e
d
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
T
A
= 25 °C
Fig. 2
Forward Voltage vs
Forward Current
gra_003.ds4
Forward current - mA
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
0 20 40 60
Fig. 3 Forward Voltage vs
Temperature
gra_207.ds4
Temperature - °C
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.00
1.05
1.15
1.20
1.30
1.35
1.40
-40 -15 10 35 60
85
I
F
= 20 mA
1.25
1.10
Fig. 4
Spectral Bandwidth
gra_005.ds4
Wavelength - nm
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 5 Relative Power Output vs
Free Air Temperature
gra_130.ds4
T
A
- Free-air temperature - (°C)
R
e
l
a
t
i
v
e
p
o
w
e
r
o
u
t
p
u
t
0.1
1.0
10
-50 -25 0 +25 +50 +75 +100
0.2
0.5
2.0
5.0
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
I
F
= 40 mA
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
46
P1-P3P4-P4

SEP8507-001

Mfr. #:
Buy SEP8507-001
Manufacturer:
Description:
Infrared Emitters 135deg, End-Emitting 0.7 us Rise and Fall
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet