APTDF200H60G
APTDF200H60G – Rev 2 October, 2012
www.microsemi.com
3-5
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=-55°C
T
J
=25°C
T
J
=175°C
T
J
=125°C
0
100
200
300
400
500
600
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
, Anode to Cathode Voltage (V)
I
F
, Forward Current (A)
Forward Current vs Forward Voltage
I
RRM
vs. Current Rate of Charge
100 A
200 A
400 A
0
20
40
60
80
100
120
0 400 800 1200 1600 2000 2400
-diF/dt (A/µs)
I
RRM
, Reverse Recovery Current (A)
T
J
=125°C
V
R
=400V
Trr vs. Current Rate of Charge
100 A
200 A
400 A
50
100
150
200
250
300
0 400 800 1200 1600 2000 2400
-di
F
/dt (A/µs)
t
rr
, Reverse Recovery Time (ns)
T
J
=125°C
V
R
=400V
Q
RR
vs. Current Rate Charge
100 A
200 A
400 A
0
2
4
6
8
0 400 800 1200 1600 2000 2400
-diF/dt (A/µs)
Q
RR
, Reverse Recovery Charge (µC)
T
J
=125°C
V
R
=400V
Capacitance vs. Reverse Voltage
0
400
800
1200
1600
2000
2400
2800
1 10 100 1000
V
R
, Reverse Voltage (V)
C, Capacitance (pF)
0
50
100
150
200
250
300
25 50 75 100 125 150 175
Case Temperature (°C)
I
F
(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
T
J
=175°C