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NE592D8R2G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 5
1 Publication Order Number:
NE592/D
NE592
Video Amplifier
The NE592 is a monolithic, two-stage, differential output,
wideband video amplifier. It offers fixed gains of 100 and 400
without external components and adjustable gains from 400 to 0 with
one external resistor. The input stage has been designed so that with
the addition of a few external reactive elements between the gain
select terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
Features
• 120 MHz Unity Gain Bandwidth
• Adjustable Gains from 0 to 400
• Adjustable Pass Band
• No Frequency Compensation Required
• Wave Shaping with Minimal External Components
• MIL-STD Processing Available
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Floppy Disk Head Amplifier
• Video Amplifier
• Pulse Amplifier in Communications
• Magnetic Memory
• Video Recorder Systems
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
SOIC−8
D SUFFIX
CASE 751
1
8
MARKING
DIAGRAMS
A = Assembly Location
L, WL = Wafer Lot
Y = Year
W, WW = Work Week
G or G = Pb−Free Package
www.onsemi.com
NE592
ALYW
G
1
SOIC−14
D SUFFIX
CASE 751A
1
NE592D14G
AWLYWW
1
14
+V
Q6
OUTPUT 1
OUTPUT 2
R1 R2 R8 R10 R9
Q5
Q4 Q3
R11
R12
Q11
Q10
R13 R14R16R15R7BR7A
Q7B Q8 Q9
Q7A
G2A
G1A
INPUT 1
INPUT 2
R3 R5
G1B
G2B
Q1 Q2
‐V
Figure 1. Block Diagram
NE592
www.onsemi.com
2
PIN CONNECTIONS
1
2
3
45
6
7
8
1
2
3
4
5
6
78
14
13
12
11
10
9
INPUT 1
NC
G
2A
GAIN SELECT
G
1A
GAIN SELECT
V+
NC
OUTPUT 1
INPUT 2
NC
G
2B
GAIN SELECT
G
1B
GAIN SELECT
V‐
NC
OUTPUT 2
INPUT 2
V‐
OUTPUT 2
INPUT 1
V+
OUTPUT 1
G
1A
GAIN SELECT
G
1B
GAIN SELECT
SOIC-14 SOIC-8
(Top View)
(Top View)
MAXIMUM RATINGS (T
A
= +25°C, unless otherwise noted.)
Rating Symbol Value Unit
Supply Voltage V
CC
"8.0 V
Differential Input Voltage V
IN
"5.0 V
Common-Mode Input Voltage V
CM
"6.0 V
Output Current I
OUT
10 mA
Operating Ambient Temperature Range T
A
0 to +70 °C
Operating Junction Temperature T
J
150 °C
Storage Temperature Range T
STG
65 to +150 °C
Maximum Power Dissipation, T
A
= 25°C (Still Air) (Note 1)
SOIC-14 Package
SOIC-8 Package
P
D
MAX
0.98
0.79
W
Thermal Resistance, Junction−to−Ambient
SOIC-14 Package
SOIC-8 Package
R
q
JA
145
182
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Derate above 25°C at the following rates:
SOIC-14 package at 6.9 mW/°C
SOIC-8 package at 5.5 mW/°C
NE592
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS (V
SS
= "6.0 V, V
CM
= 0, typicals at T
A
= +25°C, min and max at 0°C v T
A
v 70°C, unless
otherwise noted. Recommended operating supply voltages V
S
= "6.0 V.)
Characteristic Test Conditions Symbol Min Typ Max Unit
Differential Voltage Gain
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
R
L
= 2.0 kW, V
OUT
= 3.0 V
P-P
A
VOL
250
80
400
100
600
120
V/V
Input Resistance
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
−
T
A
= 25°C
0°C v T
A
v 70°C
R
IN
−
10
8.0
4.0
30
−
−
−
−
kW
Input Capacitance Gain 2 (Note 4) C
IN
− 2.0 − pF
Input Offset Current T
A
= 25°C
0°C v T
A
v 70°C
I
OS
−
−
0.4
−
5.0
6.0
mA
Input Bias Current T
A
= 25°C
0°C v T
A
v 70°C
I
BIAS
−
−
9.0
−
30
40
mA
Input Noise Voltage BW 1.0 kHz to 10 MHz V
NOISE
− 12 − mV
RMS
Input Voltage Range − V
IN
"1.0 − − V
Common-Mode Rejection Ratio
Gain 2 (Note 4)
V
CM
"1.0 V, f < 100 kHz, T
A
= 25°C
V
CM
"1.0 V, f < 100 kHz,
0°C v T
A
v 70°C
V
CM
"1.0 V, f < 5.0 MHz
CMRR 60
50
−
86
−
60
−
−
−
dB
Supply Voltage Rejection Ratio
Gain 2 (Note 4)
DV
S
= "0.5 V PSRR 50 70 − dB
Output Offset Voltage
Gain 1
Gain 2 (Note 4)
Gain 3 (Note 5)
Gain 3 (Note 5)
R
L
= R
R
L
= R
R
L
= R, T
A
= 25°C
R
L
= R, 0°C v T
A
v 70°C
V
OS
−
−
−
−
−
−
0.35
−
1.5
1.5
0.75
1.0
V
Output Common-Mode Voltage R
L
= R, T
A
= 25°C V
CM
2.4 2.9 3.4 V
Output Voltage Swing Differential R
L
= 2.0 kW, T
A
= 25°C
R
L
= 2.0 kW, 0°C v T
A
v 70°C
V
OUT
3.0
2.8
4.0
−
−
−
V
Output Resistance − R
OUT
− 20 − W
Power Supply Current R
L
= R, T
A
= 25°C
R
L
= R, 0°C v T
A
v 70°C
I
CC
−
−
18
−
24
27
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (T
A
= +25°C V
SS
= "6.0 V, V
CM
= 0, unless otherwise noted. Recommended operating
supply voltages V
S
= "6.0 V.)
Characteristic Test Conditions Symbol Min Typ Max Unit
Bandwidth
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
−
BW
−
−
40
90
−
−
MHz
Rise Time
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
V
OUT
= 1.0 V
P−P
t
R
−
−
10.5
4.5
12
−
ns
Propagation Delay
Gain 1 (Note 2)
Gain 2 (Notes 3 and 4)
V
OUT
= 1.0 V
P−P
t
PD
−
−
7.5
6.0
10
−
ns
2. Gain select Pins G
1A
and G
1B
connected together.
3. Gain select Pins G
2A
and G
2B
connected together.
4. Applies to 14-pin version only.
5. All gain select pins open.
P1-P3P4-P6P7-P9P10-P10

NE592D8R2G

Mfr. #:
Buy NE592D8R2G
Manufacturer:
ON Semiconductor
Description:
Video Amplifiers 2 Stage Diff Output Wideband Video
Lifecycle:
New from this manufacturer.
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