V
BR
V
RWM
V
F1
V
F2 @
I
F2
t
fr
t
rr
TYPES @ I
R
I
FM
I
F
I
R
= 10 mA
=100 µA =10 mA I
F
= 10 mA
(Pulsed) (Pulsed) =50 mA I
REC
= 1 mA
V (pk) V (pk) V dc V dc mA ns ns
1N6638U & US 150 125 0.8 1.1 200 20 4.5
1N6642U & US 100 75 0.8 1.2 100 20 5.0
1N6643U & US 75 50 1.0 1.2 100 20 6.0
I
R1
I
R2
I
R3
I
R4
C
T1
C
T2
TYPES
V
R@
V
R
V
R
= 20 V V
R
= V
RWM
V
R
=V
R
=
= 20 V = V
RWM
T
A
= 150°C T
A
= 150°C 0V 1.5V
nA dc µA dc µA dc µA dc pF pF
1N6638U & US 35 0.5 50 100 2.5 2.0
1N6642U & US 25 0.5 50 100 5.0 2.8
1N6643U & US 50 0.5 75 160 5.0 2.8
157
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600 FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above T
EC
= + 110°C
Surge Current: I
FSM
= 2.5A, half sine wave, P
w
= 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
• 1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
1N6638U & US
1N6642U & US
1N6643U & US
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
OJEC
):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (Z
O
JX
): 25
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.78 2.16 0.070 0.085
F 0.48 0.71 0.019 0.028
G 4.19 4.95 0.165 0.195
S 0.08MIN. 0.003MIN.
FIGURE 1
