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VS-GA100TS60SFPBF

P1-P3P4-P6P7-P7
VS-GA100TS60SFPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
1
Document Number: 94544
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
“Half-Bridge” IGBT INT-A-PAK,
(Standard Speed IGBT), 100 A
FEATURES
• Standard speed PT IGBT technology
• Optimized for hard switching speed
•FRED Pt
®
antiparallel diodes with fast recovery
• Very low conduction losses
•Al
2
O
3
DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
• Direct mounting to heatsink
• Very low junction to case thermal resistance
•Low EMI
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 220 A
V
CE(on)
at 100 A, 25 °C 1.11 V
Speed DC to 1 kHz
Package INT-A-PAK
Circuit Half bridge
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 220
A
T
C
= 130 °C 100
Pulsed collector current I
CM
440
Peak switching current I
LM
440
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation P
D
T
C
= 25 °C 780
W
T
C
= 100 °C 312
Operating junction temperature range T
J
-40 to +150
°C
Storage temperature range T
Stg
-40 to +125
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 1 mA 600 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A - 1.11 1.28
I
C
= 200 A - 1.39 -
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 1.08 1.22
Gate threshold voltage V
GE(th)
I
C
= 0.25 mA 3 - 6
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - - 1
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - - 10
Diode forward voltage drop V
FM
I
C
= 100 A, V
GE
= 0 V - 1.44 1.96
V
I
C
= 100 A, V
GE
= 0 V, T
J
= 125 °C - 1.25 1.54
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
VS-GA100TS60SFPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
2
Document Number: 94544
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge Q
g
I
C
= 100 A
V
CC
= 400 V
V
GE
= 15 V
- 640 700
nCGate to emitter charge Q
ge
- 108 120
Gate to collector charge Q
gc
- 230 300
Rise time t
r
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 15 
T
J
= 25 °C
-0.45-
μs
Fall time t
f
-1.0-
Turn-on switching energy E
on
-46
mJ
Turn-off switching energy E
off
-2329
Total switching energy E
ts
-2735
Turn-on switching energy E
on
I
C
= 100 A, V
CC
= 480 V
V
GE
= 15 V, R
g
= 15 
T
J
= 125 °C
-612
Turn-off switching energy E
off
-3540
Total switching energy E
ts
-4152
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 16 250 -
pFOutput capacitance C
oes
- 1040 -
Reverse transfer capacitance C
res
- 190 -
Diode reverse recovery time t
rr
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
rr
= 200 V
-91155ns
Diode peak reverse current I
rr
- 10.6 15 A
Diode recovery charge Q
rr
- 500 900 nC
Diode reverse recovery time t
rr
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
rr
= 200 V, T
J
= 125 °C
- 180 344 ns
Diode peak reverse current I
rr
- 17 20.5 A
Diode recovery charge Q
rr
- 1633 2315 nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
-40 - 150
°C
Storage temperature range T
Stg
-40 - 125
Junction to case
per switch
R
thJC
- - 0.16
°C/Wper diode - - 0.48
Case to sink per module R
thCS
-0.1-
Mounting torque
case to heatsink - - 4
Nm
case to terminal 1, 2, 3 - - 3
Weight -185-g
VS-GA100TS60SFPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
3
Document Number: 94544
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Maximum Collector Current vs. Case Temperature
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 6 - Typical Switching Losses vs. Gate Resistance
V
CE
-
Collector-to-Emitter Voltage (V)
I
C
-
Collector-to-Emitter Current (A)
10
100
1000
0.6 0.8 1 1.2 1.4 1.6 1.8
T
J
= 25 °C
V
GE
= 15 V
T
J
= 125 °C
V
GE
-
Gate-to-Emitter Voltage (V)
I
C
-
Collector-to-Emitter Current (A)
1
10
100
1000
5.5 6.5 7.5 8.5
V
CE
= 10 V
380 μs PULSE WIDTH
T
J
= 25 °C
T
J
= 125 °C
T
C
-
Case Temperature (°C)
Maximum DC
Collector Current (A)
0
40
80
120
160
200
240
25 50 75 100 125 150
T
J
-
Junction Temperature (°C)
V
CE
-
Collector-to-Emitter Voltage (V)
0.7
0.9
1.1
1.3
1.5
25 50 75 100 125 150
I
C
= 200 A
I
C
= 100 A
I
C
= 50 A
Q
g
-
Total Gate Charge (nC)
V
GE
-
Gate-to-Emitter Voltage (V)
0
5
10
15
20
0 100 200 300 400 500 600 700
V
CC
= 400 V
I
C
= 100 A
R
g
-
Gate Resistance (Ω)
Switching Losses (mJ)
0
5
10
15
20
25
30
35
10 20 30 40 50
E
on
E
off
T
J
= 25 °C, V
CE
= 480 V
V
GE
= 15 V, I
C
= 100 A
P1-P3P4-P6P7-P7

VS-GA100TS60SFPBF

Mfr. #:
Buy VS-GA100TS60SFPBF
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules RECOMMENDED ALT 78-VS-GP100TS60SFPBF
Lifecycle:
New from this manufacturer.
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