RJL5020DPK Preliminary
R07DS0239EJ0500 Rev.5.00 Page 2 of 6
Jan 07, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
500 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 10 A V
DS
= 500 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±0.1 A V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
1.5 — 4.0 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 0.105 0.135 I
D
= 19 A, V
GS
= 10 V
Note4
Input capacitance Ciss — 4750 — pF
Output capacitance Coss — 520 — pF
Reverse transfer capacitance Crss — 61 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d(on)
— 45 — ns
Rise time t
r
— 90 — ns
Turn-off delay time t
d(off)
— 215 — ns
Fall time t
f
— 154 — ns
I
D
= 19 A
V
GS
= 10 V
R
L
= 13.2
Rg = 10
Total gate charge Qg — 140 — nC
Gate to source charge Qgs — 19 — nC
Gate to drain charge Qgd — 57 — nC
V
DD
= 400 V
V
GS
= 10 V
I
D
= 38 A
Body-drain diode forward voltage V
DF
— 0.94 1.60 V I
F
= 38 A, V
GS
= 0
Note4
Body-drain diode reverse recovery time t
rr
— 170 — ns
I
F
= 38 A, V
GS
= 0
di
F
/dt = 100 A/s
Notes: 4. Pulse test
