DMG1012TQ-7 Datasheet DMG1012TQ-7, DMG1012T-7 | P1-P3

DMG1012T

Document number: DS31783 Rev. 3 - 2

1 of 6

www.diodes.com

January 2012

DMG1012T

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT523

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMG1012T-7 Commercial SOT523 3000/Tape & Reel

DMG1012TQ-7 Automotive SOT523 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT523

Top View

Equivalent Circuit

To

p

View

Source

Gate

Protection

Diode

Gate

Drain

G

S

D

ESD PROTECTED TO 2kV

NA1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: W = 2009)

M = Month (ex: 9 = September)

NA1

YM

DMG1012T

Document number: DS31783 Rev. 3 - 2

2 of 6

www.diodes.com

January 2012

DMG1012T

NEW PRODUCT

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±6 V

Continuous Drain Current (Note 4)

Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

0.63

0.45

A

Pulsed Drain Current

I

DM

6 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)

P

D

0.28 W

Thermal Resistance, Junction to Ambient

R

θ

JA

452 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= 25°C I

DSS

- - 100 nA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - ±1.0

μA

V

GS

= ±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS

(

th

)

0.5 - 1.0 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

0.3 0.4

Ω

V

GS

= 4.5V, I

D

= 600mA

0.4 0.5

V

GS

= 2.5V, I

D

= 500mA

0.5 0.7

V

GS

= 1.8V, I

D

= 350mA

Forward Transfer Admittance

|Y

fs

|

- 1.4 - S

V

DS

= 10V, I

D

= 400mA

Diode Forward Voltage (Note 5)

V

SD

0.7 1.2 V

V

GS

= 0V, I

S

= 150mA

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

- 60.67 -

pF

V

DS

=16V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 9.68 -

pF

Reverse Transfer Capacitance

C

rss

- 5.37 -

pF

Total Gate Charge

Q

g

- 736.6 -

pC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 250mA

Gate-Source Charge

Q

g

s

- 93.6 -

pC

Gate-Drain Charge

Q

g

d

- 116.6 -

pC

Turn-On Delay Time

t

D

(

on

)

-

5.1

- ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 47Ω, R

G

= 10Ω,

I

D

= 200mA

Turn-On Rise Time

t

r

-

7.4

- ns

Turn-Off Delay Time

t

D

(

off

)

-

26.7

- ns

Turn-Off Fall Time

t

f

-

12.3

- ns

Notes: 4. Device mounted on FR-4 PCB.

5. Short duration pulse test used to minimize self-heating effect.

DMG1012T

Document number: DS31783 Rev. 3 - 2

3 of 6

www.diodes.com

January 2012

DMG1012T

NEW PRODUCT

0

0.3

0.6

0.9

1.2

1.5

012 345

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.2V

GS

V = 1.5V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 8.0V

GS

0

0.3

0.6

0.9

1.2

1.5

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V = 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.3 0.6 0.9 1.2 1.5

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 1.8V

GS

V = 4.5V

GS

V = 2.5V

GS

0

0.1

0.2

0.3

0.4

0.5

0.6

0 0.3 0.6 0.9 1.2 1.5

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

0

0.2

0.4

0.6

0.8

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

DMG1012TQ-7

DMG1012TQ-7

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