1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407, 1N5408
www.vishay.com
Vishay General Semiconductor
Revision: 01-Aug-13
1
Document Number: 88516
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
General Purpose Plastic Rectifier
FEATURES
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V, 100 V, 200 V, 300 V, 500 V,
600 V, 800 V, 1000 V
I
FSM
200 A
I
R
5.0 μA
V
F
1.2 V
T
J
max. 150 °C
Package DO-201AD
Diode variations Single die
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT
Maximum repetitive peak
reverse voltage
V
RRM
50 100 200 300 400 500 600 800 1000 V
Maximum RMS voltage V
RMS
35 70 140 210 280 350 420 560 700 V
Maximum DC blocking voltage V
DC
50 100 200 300 400 500 600 800 1000 V
Maximum average forward
rectified current 0.5" (12.5 mm)
lead length at T
L
= 105 °C
I
F(AV)
3.0 A
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Maximum full load reverse
current, full cycle average
0.5" (12.5 mm) lead length
at T
L
= 105 °C
I
R(AV)
500 μA
Operating junction and
storage temperature range
T
J
, T
STG
- 50 to + 150 °C