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IXYN120N120C3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN120N120C3
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Maximum Transient Thermal Impedance
aaaaa
0.2
Fig. 7. Transconductance
0
20
40
60
80
100
120
140
0 50 100 150 200 250 300
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
280
100 300 500 700 900 1100 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 1
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 120A
I
G
= 10mA
Fig. 9. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
3
4
5
6
7
8
9
10
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R
G
- Ohms
E
off
- MilliJoules
2
4
6
8
10
12
14
16
18
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
180
200
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R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
800
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1
2
3
4
5
6
7
8
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1

V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1
2
3
4
5
6
7
8
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1

V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
160
180
200
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
300
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
70
80
90
100
110
120
130
140
150
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
300
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
IXYN120N120C3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN120N120C3
IXYS REF: IXY_120N120C3(9P-C91) 9-09-13
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
20
30
40
50
60
70
80
90
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
30
31
32
33
34
35
36
37
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
28
30
32
34
36
38
40
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
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R
G
- Ohms
t
r i
- Nanoseconds
20
28
36
44
52
60
68
76
84
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 21. Maximum Peak Load Current vs. Frequency
0
10
20
30
40
50
60
70
80
90
100
110
120
10 100 1,000
f
max
- KiloHertzs
I
C
- Amperes
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 600V
V
GE
= 15V
R
G
= 1
D = 0.5
Square Wave
Tri angular Wave
P1-P3P4-P6

IXYN120N120C3

Mfr. #:
Buy IXYN120N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3 (MINI
Lifecycle:
New from this manufacturer.
Delivery:
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