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Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS
a
(for Unipolar Supplies)
Parameter Symbol
Test Conditions
Unless Specified
V + = 12 V, V - = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 12 12 V
Drain-Source
On-Resistance
R
DS(on)
V + = 10.8 V,
I
S
= - 10 mA, V
D
= 3 V, 8 V
Room
Full
40 80
100
80
100
Dynamic Characteristics
Tur n -On T i m e t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= 8 V, see figure 2
Room
Hot
175 250
400
250
315
nsTurn-Off Time t
OFF
Room
Hot
95 125
140
125
140
Break-Before-Make
Time Delay
t
D
DG413 only, V
S
= 8 V
R
L
= 300 , C
L
= 35 pF
Room 25
Charge Injection Q V
g
= 6 V, R
g
= 0 , C
L
= 10 nF Room 25 pC
Power Supplies
Positive Supply Current I+
V + = 13.5 V, V
IN
= 0 V or 5 V
Room
Hot
0.0001 1
5
1
5
µA
Negative Supply Current I-
Room
Hot
- 0.0001 - 1
- 5
- 1
- 5
Logic Supply Current I
L
Room
Hot
0.0001 1
5
1
5
Ground Current I
GND
Room
Hot
- 0.0001 - 1
- 5
- 5
On-Resistance vs. V
D
and Power Supply Voltage
V
D
- Drain V oltage (V)
- 20 - 15 - 10 - 5 0 5 10 15 20
45
40
35
30
25
20
15
10
5
0
50
R
DS(on)
- Drain-Source On-Resistance (Ω)
T
A
= 25 °C
± 5 V
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
On-Resistance vs. V
D
and Unipolar Supply Voltage
0 2 4 6 8 101214161820
0
50
100
150
200
250
300
V
V
L
= 5 V
V+ = 3 V
V
L
= 3 V
8 V
V+ = 5 V
12 V
15 V
20 V
V
D
- Drain Voltage (V)
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
5
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Leakage Current vs. Analog Voltage
Charge Injection vs. Analog Voltage
Input Switching Threshold vs. Supply Voltage
(pA)
I
, I
SD
V
D
or V
S
- Drain or Source Voltage (V)
30
10
- 40
- 60
- 15 - 10 - 5 0 5 10 15
20
0
- 50
- 30
- 10
- 20
V+ = 15 V
V- = - 15 V
V
L
= 5 V
T
A
= 25 °C
I
D(of f)
I
S( of f)
I
D(on)
40
Q (pC)
V
S
- Source Voltage (V)
100
80
60
40
20
0
- 20
- 40
- 60
- 15 - 10 - 5 0 5 10 15
V+ = 15 V
V- = - 15 V
V
L
= 5 V
C
L
= 10 nF
C
L
= 1 nF
(V)
TH
V
3.5
3.0
5 1015202530354
0
2.5
2.0
1.5
1.0
0.5
0
(V+)
6.5 V
5.5 V
V
L
= 7.5 V
4.5 V
I
D
, I
S
Leakages vs. Temperature
Charge Injection vs. Analog Voltage
Switching Time vs. Temperature
- 15 - 10 - 5 0 5 10 15
5
10
15
20
25
30
35
V+ = 15 V
V- = - 15 V
V
L
= 5 V
125 °C
85 °C
25 °C
- 55 °C
R
DS(on)
- Drain-Source On-Resistance ()
V
D
- Drain Voltage (V)
V
D
- Drain Voltage (V)
Q (pC)
100
80
60
40
20
0
- 20
- 40
- 60
- 15 - 10 - 5 0 5 10 15
120
140
V+ = 15 V
V- = - 15 V
V
L
= 5 V
C
L
= 10 nF
C
L
= 1 nF
Temperature (°C)
(ns)t
ON
,t
OFF
240
180
120
60
0
- 55 - 35 - 15 5 25 45 65 85 105 125
210
150
90
30
V+ = 15 V
V- = - 15 V
V
L
= 5 V
V
S
= 10 V
t
OFF
t
ON
www.vishay.com
6
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SCHEMATIC DIAGRAM (Typical Channel)
TEST CIRCUITS
Supply Current vs. Input Switching Frequency
f - Frequency (Hz)
I
SUPPLY
100 mA
10 mA
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
100 1K 10K 100K 1M
10M
I+, I-
I
L
V+ = 15 V
V- = - 15 V
V
L
= 5 V
= 1 SW
= 4 SW
10
Figure 1.
Level
Shift/
Drive
V
IN
V
L
S
V+
GND
V-
D
V-
V+
Figure 2. Switching Time

DG413DY

Mfr. #:
Manufacturer:
Description:
IC SWITCH QUAD SPST 16-SOIC
Lifecycle:
New from this manufacturer.
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