FDP5500_F085 N-Channel UltraFET Power MOSFET
FDP5500_F085 Rev. A www.fairchildsemi.com2
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage (Note 1) 55 V
V
DGR
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) 55 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current Continuous (T
C
< 135
o
C, V
GS
= 10V) 80
A
Pulsed See Figure 4
E
AS
Single Pulse Avalanche Energy (Note 2) 860 mJ
P
D
Power Dissipation 375 W
Derate above 25
o
C2.5W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to + 175
o
CT
L
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) 300
T
pkg
Max. Package Temp. for Soldering (Package Body for 10sec) 260
R
θJC
Thermal Resistance Junction to Case 0.4
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-220AB, 1in
2
copper pad area 62
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP5500 FDP5500_F085 TO-220AB Tube N/A 50 units
Electrical Characteristics T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 55 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 50V, V
GS
= 0V - - 1
µA
V
DS
= 45V T
C
= 150
o
C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA22.84V
r
DS(on)
Drain to Source On Resistance I
D
= 80A, V
GS
= 10V - 5.1 7 mΩ
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 3565 - pF
C
oss
Output Capacitance - 1310 - pF
C
rss
Reverse Transfer Capacitance - 395 - pF
Q
g(TOT)
Total Gate Charge at 20V V
GS
= 0 to 20V
V
DD
= 30V
I
D
= 80A
R
L
= 0.4Ω
I
g
= 1.0mA
- 207 269 nC
Q
g(10)
Total Gate Charge at 10V V
GS
= 0 to 10V - 114 148 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0 to 2V - 6.6 8.6 nC
Q
gs
Gate to Source Gate Charge
- 17.2 - nC
Q
gd
Gate to Drain “Miller“ Charge - 52 - nC
