ZTX603STZ Datasheet ZTX603, ZTX603STZ, ZTX603STOB | P1-P3

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 1  MARCH 94

FEATURES

* 80 Volt V

CEO

* 1 Amp continuous current

* Gain of 2K at I

C

=1 Amp

*P

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX602 ZTX603 UNIT

Collector-Base Voltage V

CBO

80 100 V

Collector-Emitter Voltage V

CEO

60 80 V

Emitter-Base Voltage V

EBO

10 V

Peak Pulse Current I

CM

4A

Continuous Collector Current I

C

1A

Power Dissipation at T

amb

= 25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

80 100 V

I

C

=100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

60 80 V I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

10 10 V

I

E

=100µA

Collector Cut-Off

Current

I

CBO

0.01

10

0.01

10

µA

V

CB

=60V

V

CB

=80V

V

CB

=60V,T =100°C

V

CB

=80V,T =100°C

Emitter Cut-Off

Current

I

EBO

0.1 0.1

µA

V

EB

=8V

Colllector-Emitter

Cut-Off Current

I

CES

10

µA

V

CES

=60V

V

CES

=80V

Collector-Emitter

Saturation Voltage

V

CE(sat)

1.0

V

I

C

=400mA,

I

B

=0.4mA*

I

C

=1A, I

B

=1mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

1.8 1.8 V I

C

=1A, I

B

=1mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

1.7 1.7 V IC=1A, V

CE

=5V*

E-Line

TO92 Compatible

ZTX602

ZTX603

3-209

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Static Forward

Current Transfer

Ratio

h

FE

2K

5K

2K

0.5K

100K

2K

5K

2K

0.5K

100K

I

C

=50mA, V

CE

=5V

I

C

=500mA, V

CE

=5V*

I

C

=1A, V

CE

=5V*

I

C

=2A, V

CE

=5V*

Transition Frequency f

T

150 150 MHz I

C

=100mA, V

CE

=10V

f=20MHz

Input Capacitance C

ibo

90 Typical pF V

EB

=500mV, f=1MHz

Output Capacitance C

obo

15 Typical pF V

CB

=10V, f=1MHz

Switching Times t

on

0.5 Typical

µs

I

C

=500mA, V

CE

=10V

I

B1

=I

B2

=0.5mA

t

off

1.1 Typical

µs

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

The maximum permissible operational temperature can be obtained from this graph using

the following equation

T

( )

=

Power (max )

− Power (act )

0.0057

+25° C

T

amb(max )

= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a

given V

CE

and source resistance (R

S

)

Power(actual)= Actual power dissipation in users circuit

ZTX602

ZTX603

C

B

E

Voltage Derating Graph

V

CE

- Collector-Emitter Voltage (Volts)

1.0

0.8

0.6

0.4

0

0.2

R = 50K

Ω

1 10 100

DC Conditions

R = 200K

Ω

R =

∞

Maximum Power Dissipation (W)

200

R = 1M

Ω

R = 10K

Ω

ZTX603

ZTX602

3-210

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 1  MARCH 94

FEATURES

* 80 Volt V

CEO

* 1 Amp continuous current

* Gain of 2K at I

C

=1 Amp

*P

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX602 ZTX603 UNIT

Collector-Base Voltage V

CBO

80 100 V

Collector-Emitter Voltage V

CEO

60 80 V

Emitter-Base Voltage V

EBO

10 V

Peak Pulse Current I

CM

4A

Continuous Collector Current I

C

1A

Power Dissipation at T

amb

= 25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

80 100 V

I

C

=100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

60 80 V I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

10 10 V

I

E

=100µA

Collector Cut-Off

Current

I

CBO

0.01

10

0.01

10

µA

V

CB

=60V

V

CB

=80V

V

CB

=60V,T =100°C

V

CB

=80V,T =100°C

Emitter Cut-Off

Current

I

EBO

0.1 0.1

µA

V

EB

=8V

Colllector-Emitter

Cut-Off Current

I

CES

10

µA

V

CES

=60V

V

CES

=80V

Collector-Emitter

Saturation Voltage

V

CE(sat)

1.0

V

I

C

=400mA,

I

B

=0.4mA*

I

C

=1A, I

B

=1mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

1.8 1.8 V I

C

=1A, I

B

=1mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

1.7 1.7 V IC=1A, V

CE

=5V*

E-Line

TO92 Compatible

ZTX602

ZTX603

3-209

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Static Forward

Current Transfer

Ratio

h

FE

2K

5K

2K

0.5K

100K

2K

5K

2K

0.5K

100K

I

C

=50mA, V

CE

=5V

I

C

=500mA, V

CE

=5V*

I

C

=1A, V

CE

=5V*

I

C

=2A, V

CE

=5V*

Transition Frequency f

T

150 150 MHz I

C

=100mA, V

CE

=10V

f=20MHz

Input Capacitance C

ibo

90 Typical pF V

EB

=500mV, f=1MHz

Output Capacitance C

obo

15 Typical pF V

CB

=10V, f=1MHz

Switching Times t

on

0.5 Typical

µs

I

C

=500mA, V

CE

=10V

I

B1

=I

B2

=0.5mA

t

off

1.1 Typical

µs

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

The maximum permissible operational temperature can be obtained from this graph using

the following equation

T

( )

=

Power (max )

− Power (act )

0.0057

+25° C

T

amb(max )

= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a

given V

CE

and source resistance (R

S

)

Power(actual)= Actual power dissipation in users circuit

ZTX602

ZTX603

C

B

E

Voltage Derating Graph

V

CE

- Collector-Emitter Voltage (Volts)

1.0

0.8

0.6

0.4

0

0.2

R = 50K

Ω

1 10 100

DC Conditions

R = 200K

Ω

R =

∞

Maximum Power Dissipation (W)

200

R = 1M

Ω

R = 10K

Ω

ZTX603

ZTX602

3-210

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

IC - Collector Current (Amps)

V

C

E

(sat)

-

(V

olts)

I

C

- Collector Current (Amps)

V

CE

-

Collector Voltage (Volts)

Safe Operating Area

1100010 100

0.01

0.1

1

10

Single Pulse Test at T

amb

=25°C

D.C.

1s

100ms

10ms

1.0ms

100µs

0

0.4

0.01

0.1

101

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IC - Collector Current (Amps)

V

BE(sat)

v I

C

V

B

E

(sat)

- (V

olts)

0.6

0.01

100.1 1

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I

C

/I

B

=100

I

C

/I

B

=100

IC - Collector Current (Amps)

h

FE

v I

C

h

FE

- Gain normalised to 1 Amp

0.001

0.01

100.1 1

0.5

1.0

1.5

2.0

2.5

V

CE

=5V

IC - Collector Current (Amps)

V

BE(on)

v I

C

V

B

E

-

(

V

olts)

0.6

1.0

1.4

1.8

0.01

0.1

110

0.2

V

CE

=5V

-55°C

+25°C

+100°C

0.4

0.8

1.2

1.6

2.2

0.2

-55°C

+25°C

+100°C

+175°C

-55°C

+25°C

+100°C

+175°C

0.4

-55°C

+25°C

+100°C

ZTX602

ZTX603

2.0

ZTX602

ZTX603

3-211

ZTX603STZ

ZTX603STZ

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