Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
NS6A5.0AT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms P
PK
600 W
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
P
D
R
q
JL
1.5
20
50
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
P
D
R
q
JA
0.5
4.0
250
W
mW/°C
°C/W
Forward Surge Current (Note 4) @ T
A
= 25°C I
FSM
40 A
Operating and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 30 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
V
RWM
(Note 6)
I
R
@ V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 8)
C
typ
(Note 9)
V
BR
(Note 7) Volts @ I
T
V
C
I
PP
V
mA
Min Nom Max mA
V A pF
NS6A5.0AT3G 6QE 5.0 800 6.40 6.7 7.0 10 9.2 65.2 2700
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
8. Surge current waveform per Figure 1.
9. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25°C.
