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IRF1404ZSTRLPBF

P1-P3P4-P6P7-P9P10-P12
06/19/12
www.irf.com 1
HEXFET
®
Power MOSFET
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
S
D
G
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Features
IRF1404ZPbF
IRF1404ZSPbF
IRF1404ZLPbF
D
2
Pak
IRF1404ZSPbF
TO-220AB
IRF1404ZPbF
TO-262
IRF1404ZLPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(S ilicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(P ackage L imited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case –––
0.75
R
θ
CS
Case-to-Sink, Flat Greased Surface 0.50 –––
R
θ
JA
Junction-to-Ambient ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) ––– 40
300 (1.6mm from case )
10 lbf
in (1.1N
m)
°C/W
Max.
180
120
710
120
-55 to + 175
480
330
See Fig.12a, 12b, 15, 16
200
1.3
± 20
V
(BR)DSS
40V
R
DS(on)
typ. 2.7m
Ω
max. 3.7m
Ω
I
D (Silicon Limited)
180A
I
D (Package Limited)
120A
PD - 96040C
IRF1404Z/S/LPbF
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.7 3.7
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 170 ––– ––– V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GS S
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 100 150
Q
gs
Gate-to-Source Charge ––– 31 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 42 –––
t
d(on)
Turn-On Delay Time ––– 18 –––
t
r
Rise Time ––– 110 –––
t
d(off)
Turn-Off Delay Time ––– 36 ––– ns
t
f
Fall Time ––– 58 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 4340 –––
C
oss
Output Capacitance ––– 1030 –––
C
rs s
Reverse Transfer Capacitance ––– 550 ––– pF
C
oss
Output Capacitance ––– 3300 –––
C
oss
Output Capacitance ––– 920 –––
C
oss
eff. Effective Output Capacitance ––– 1350 –––
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
120
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 750
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 28 42 ns
Q
rr
Reverse Recovery Charge ––– 34 51 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 75A**
I
D
= 75A**
V
DS
= 32V
Conditions
V
GS
= 10V
V
GS
= 0V
T
J
= 25°C, I
S
= 75A**,V
GS
= 0V
T
J
= 25°C, I
F
= 75A**, V
DD
= 20V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
**
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 75A**
R
G
= 3.0
Ω
V
DS
= 25V
ƒ = 1.0MHz
IRF1404Z/S/LPbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20μs PULSE WIDTH
Tj = 25°C
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20μs PULSE WIDTH
Tj = 175°C
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 40 80 120 160
I
D,
Drain-to-Source Current (A)
0
40
80
120
160
200
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20μs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20μs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P12

IRF1404ZSTRLPBF

Mfr. #:
Buy IRF1404ZSTRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg
Lifecycle:
New from this manufacturer.
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