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ZTX1049ASTZ

P1-P3P4-P6
ZTX1049A
Document number: DS33327 Rev. 5 - 2
1 of 6
www.diodes.com
May 2013
© Diodes Incorporated
ZTX1049A
A Product Line of
Diodes Incorporated
25V NPN MEDIUM POWER TRANSISTOR IN E-LINE
Features
• BV
CEO
> 25V
• I
C
= 4A High Continuous Collector Current
• I
CM
= 20A Peak Pulse Current
• T
J
up to 200°C for High Temperature Operation
• Low Saturation Voltage < 75mV @ 1A
• P
D
= 1W Power dissipation
• Lead-Free Finish; RoHS compliant (Note 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Applications
• LCD Backlight Converters
• Emergency Lighting
• DC-DC Converters
Mechanical Data
• Case: E-Line (TO-92 Compatible)
• Case Material: molded plastic, “Green” Molding Compound
• UL Flammability Classification Rating 94V-0
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.159 grams (approximate)
Ordering Information (Note 4)
Part Number
Marking
Case
Leads
Quantity
ZTX1049ASTZ
ZTX1049A
E-Line
Joggled
2,000 taped per Ammo Box
ZTX1049A ZTX1049A E-Line Straight 4,000 loose in a Box
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Flat Face View
Device Symbol
Pin-Out Configuration
ZTX1049A = Product type Marking Code
E-Line
(TO-92 Compatible)
ZTX
104
9A
Rounded Face View
C
E
B
Rounded Face View
Ejection Mark
on Flat Face
Bottom View
B
C
E B C
E
B C
E
Part Mark on
Rounded Face
ZTX1049A
Document number: DS33327 Rev. 5 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
ZTX1049A
A Product Line of
Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CEO
25 V
Emitter-Base Voltage
V
EBO
5 V
Continuous Collector Current
I
C
4 A
Peak Pulse Current
I
CM
20 A
Base Current
I
B
500 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1.5 W
Power Dissipation (Note 6)
P
D
1 W
Thermal Resistance Junction to Ambient (Note 5)
R
θ
JA
116
°C/W
Thermal Resistance Junction to Ambient (Note 6)
R
θ
JA
175
°C/W
Thermal Resistance Junction to Lead (Note 7)
R
θ
JL
63.75
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +200
°C
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model ESD MM
400
V
C
Notes: 5. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm X 25mm 1oz weight copper
that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.
7. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
ZTX1049A
Document number: DS33327 Rev. 5 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
ZTX1049A
A Product Line of
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
80 120 — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CES
80 120 — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
25 30 — V
I
C
= 10mA
Collector-Emitter Breakdown Voltage
BV
CEV
80 120 — V
I
C
= 100µA, V
EB
= 1V
Emitter-Base Breakdown Voltage
BV
EBO
5 8.75 — V
I
E
= 100µA
Collector Cut-off Current
I
CBO
— 0.3 10 nA
V
CB
= 50V
Collector Emitter Cut-off Current
I
CES
— 0.3 10 nA
V
CES
= 50V
Emitter Cut-off Current
I
EBO
— 0.3 10 nA
V
EB
= 4V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
—
30
60
125
155
45
80
180
220
mV
I
C
= 500mA, I
B
= 10mA
I
C
=1A, I
B
= 10mA
I
C
=2A, I
B
= 10mA
I
C
=4A, I
B
= 50mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
—
890
950 mV
I
C
=4A, I
B
= 50mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
—
820
900 mV
I
C
= 4A, V
CE
= 2V
DC Current Gain (Note 9)
h
FE
250
300
300
200
35
430
450
450
350
70
—
—
1200
—
—
—
I
C
= 10mA, V
CE
= 2V
I
C
= 0.5A, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 4A, V
CE
= 2V
I
C
= 20A, V
CE
= 2V
Current Gain-Bandwidth Product (Note 9)
f
T
— 180 — MHz
V
CE
= 10V, I
C
= 50mA
f = 50MHz
Output Capacitance (Note 9)
C
obo
— 45 60 pF
V
CB
= 10V. f = 1MHz
Turn-On Times
t
on
— 125 — ns
I
C
= 4A, I
B
= 40mA, V
CC
= 10V
Turn-Off Times
t
off
— 380 — ns
I
C
= 4A, I
B
= 40mA, V
CC
= 10V
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
P1-P3P4-P6

ZTX1049ASTZ

Mfr. #:
Buy ZTX1049ASTZ
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN High Gain & Crnt
Lifecycle:
New from this manufacturer.
Delivery:
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