APT8024B2LLG

050-7074 Rev C 5-2006
APT8024B2_LFLL
E
on
E
off
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
200
100
10
1
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 800 0 10 20 30 40 50
0 50 100 150 200 250 0.3 0.5 0.7 0.9 1.1 1.3 1.5
127
50
10
5
1
16
12
8
4
0
10mS
1mS
100µS
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
V
DS
= 400V
V
DS
= 160V
V
DS
= 640V
I
D
= 31A
T
J
=+150°C
T
J
=+25°C
C
rss
C
iss
C
oss
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100µH
t
d(on)
t
d(off)
E
on
E
off
t
r
t
f
SWITCHING ENERGY (µJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (µJ) t
r
and t
f
(ns)
0 10 20 30 40 50 0 10 20 30 40 50
5101520253035404550 0 5101520253035404550
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100µH
V
DD
= 533V
I
D
= 31A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
050-7074 Rev C 5-2006
APT8024B2_LFLL
Typical Performance Curves
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
90%
t
d(off)
10%
T
J
= 125 C
90%
t
f
Switching Energy
Gate Voltage
Drain Voltage
Drain Current
0
5 %
10 %
5 %
10 %
t
d(on)
90%
t
r
T
J
= 125 C
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
D
D.U.T.
V
DS
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT30DF60

APT8024B2LLG

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
MOSFET Power MOSFET - MOS7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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