ZHCS1006TA

SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE ”SuperBAT”

ISSUE 1 - NOVEMBER 1997 ✪

FEATURES:

• High current capability

• Low V

F

APPLICATIONS:

• Mobile telecomms, PCMIA & SCSI

• DC-DC Conversion

PARTMARKING DETAILS : S16

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Continuous Reverse Voltage V

R

60 V

Forward Current I

F

900 mA

Forward Voltage @ I

F

= 1000mA(typ) V

F

600 mV

Average Peak Forward Current;D.C.= 50% I

FAV

1600 mA

Non Repetitive Forward Current t≤100µs

t≤10ms

I

FSM

12

5

A

A

Power Dissipation at T

amb

=25°C P

tot

500 mW

Storage Temperature Range T

stg

-55 to + 150 ° C

Junction Temperature T

j

125 ° C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25° C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Reverse Breakdown

Voltage

V

(BR)R

60 80 V

I

R

=300µA

Forward Voltage V

F

245

275

330

395

455

510

620

280

320

390

470

530

600

740

mV

mV

mV

mV

mV

mV

mV

I

F

= 50mA*

I

F

= 100mA*

I

F

= 250mA*

I

F

= 500mA*

I

F

= 750mA*

I

F

= 1000mA*

I

F

= 1500mA*

Reverse Current I

R

50 100

µA

V

R

= 45V

Diode Capacitance C

D

17 pF f= 1MHz,V

R

=25V

Reverse Recovery

Time

t

rr

12 ns switched from

I

F

= 500mA to I

R

=

500mA

Measured at I

R

= 50mA

*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2%

ZHCS1006

1

3

C

1

A

3

2

SOT23

0

75 125

1101000 60

0

060

VF - Forward Voltage (V)

I

F

v V

F

1m

I

F

- Forward Current (A)IF(av) - Avg Fwd Cur (A)

0

TC - Case Temperature (°C)

I

F(av)

v T

C

Ta - Ambient Temp (°C)

125

75

V

R

- Reverse Voltage (V)

T

a

v V

R

IR - Reverse Current (A)

1n

VR - Reverse Voltage (V)

I

R

v V

R

PF(av) - Avg Pwr Diss (W)

0

I

F(av)

- Avg Fwd Curr (A)

P

F(av)

v I

F(av)

CD - Diode Capacitance (pF)

140

70

0

V

R

- Reverse Voltage (V)

C

D

v V

R

-55°C

20 40

+25°C

+125°C

20 40

85 95 105 115

DC

D=0.5

D=0.2

D=0.1

D=0.05

100

p

t

1

t

1

D=t

/t

p

I

F(pk )

I

F(av)

=DxI

F(pk )

Typic al

Tj=125°C

F(av)

P

F(av)

=I xV

F

0.1 0.2 0.3 0.4 0.5 0.6

10m

100m

1

10

0.4 0.8 1.2

0.2

0.4

0.6

0.2

0.4

0.6

0.8

P

I

t

1

F(pk )

=DxI

F(av)

=I

F(av)

F(av)

F

xV

F(pk )

p

t

/t

D=t

1

I

p

10n

100n

1u

10u

100u

1m

10m

100m

1

+50°C

+25°C

+100°C

+125°C

-55°C

DC

D=0.5

D=0.2

D=0.1

D=0.05

Typical

Tj=125°C

Rth=100°C/W

Rth=200°C/W

Rth=300°C/W

TYPICAL CHARACTERISTICS

ZHCS1006

TYPICAL CHARACTERISTICS

ZHCS1006

TYPICAL CHARACTERISTICS

* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.

MAXIMUM TRANSIENT THERMAL RESISTANCE

ZHCS1006TA

Mfr. #:

Manufacturer:

Description:

DIODE SCHOTTKY 60V 900MA SOT23-3

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet