April 2011 Doc ID 15443 Rev 4 1/10
10
LET9045C
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
(@28 V) = 45 W with 18.5 dB gain @ 960
MHz
■ P
OUT
(@36V) = 70 W with 18.5 dB gain @ 960
MHz
■ BeO free package
■ In compliance with the 2002/95/EC European
directive
Description
The LET9045C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The LET9045C is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for base
station applications requiring high linearity.
Figure 1. Pin out
M243
epoxy sealed
1
3
2
1. Drain
2. Gate
3. Source
Table 1. Device summary
Order code Package Branding
LET9045C M243 LET9045C
www.st.com
