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VESD05A2-03F-GS08

P1-P3P4-P6P7-P8
VESD05A2-03F
Document Number 81201
Rev. 1.2, 03-Mar-06
Vishay Semiconductors
www.vishay.com
1
1
2
3
2-line ESD Protection Diode in SOT490
Features
• Small SOT490 package
• Very low leakage current
•
ESD protection to
IEC 61000-4-2
± 30 kV (Air)
• ESD protection to
IEC 61000-4-2 ± 20 kV (Contact)
• Two line asymmetrical ESD-protection (BiAs)
• One line asymmetrical ESD-protection (BiSy)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOT490 (plastic package)
Lead free; non magnetic
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 2.5 mg
Packaging Codes/Options:
GS18 = 10 k per 13" reel (8 mm tape), 10 k/box
GS08 = 3 k per 7" reel (8 mm tape), 15 k/box
Marking:
4 = date code (Example only)
A1 = Type Code for VESD05A2-03F
Maximum Ratings and Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter Symbol Value Unit
ESD Air Discharge per IEC 61000-4-2 V
ESD
± 30 kV
ESD Contact Discharge per IEC 61000-4-2 V
ESD
± 20 kV
Operating Temperature T
J
- 40 to + 125 °C
Storage Temperature T
STG
- 55 to + 150 °C
1
2
3
4 A1
e3
www.vishay.com
2
Document Number 81201
Rev. 1.2, 03-Mar-06
VESD05A2-03F
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
BiAs-Mode (2-line Bidirectional Asymmetrical protection mode)
With the VESD05A2-03F two signal or data lines (L1, L2) can be clamped to ground. Due to the different clamp-
ing levels in forward and reverse direction the VESD05A2-03F clamping behavior is Bidirectional and Asym-
metric (BiAs).
Parameter Test Conditions Synbol Min. Ty p. Max. Unit
Reverse Stand-Off Voltage at max. reverse current V
RWM
5 V
Max. Reverse current at V
R
= 5 V I
R
0.1 µA
Max. Clamping voltage at I
PP
= 3 A
Acc. IEC 61000-4-5
V
C
8.9 11 V
Max. Peak pulse current Acc. IEC 61000-4-5
See Fig. 1
I
PPM
3A
Min. Reverse Breakdown Voltage at I
R
= 1 mA V
BR
6.0 6.8 7.5 V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
20 23 pF
Forward voltage at I
F
= 200 mA; t
p
< 300 µs V
F
0.95 1.2 V
ESD-Clamping voltage
(Overshoot)
at + 8 kV ESD-pulse
acc. IEC 61000-4-2
V
C-ESD
+79 V
ESD-Clamping voltage
(Undershoot)
at - 8 kV ESD-pulse
acc. IEC 61000-4-2
V
C-ESD
-72 V
19742
L1
L2
VESD05A2-03F
Document Number 81201
Rev. 1.2, 03-Mar-06
Vishay Semiconductors
www.vishay.com
3
BiSy-Mode (1-line Bidirectional Symmetrical protection mode)
Single-Line Bidirectional Symmetrical ESD-Protection (BiSy)
With the VESD05A2-03F one signal or data line (L1) can be clamped to ground. Due to the same clamping
levels in postive and negative direction the VESD05A2-03F voltage clamping behaviour is Bidirectional and
Symmetrical (BiSy).
In the BiSy-mode Pin no. 3 must not be connected. The load capacitance is about the half of the capacitance
of the BiAs-mode.
Parameter Test Conditions Synbol Min. Ty p. Max. Unit
Reverse Stand-Off Voltage at max. reverse current V
RWM
5.5 V
Max. Reverse current at V
R
= 5.5 V I
R
0.1 µA
Max. Clamping voltage at I
PP
= 3 A
Acc. IEC 61000-4-5
V
C
10.6 12 V
Max. Peak pulse current Acc. IEC 61000-4-5
See Fig. 1
I
PPM
3A
Min. Reverse Breakdown Voltage at I
R
= 1 mA V
BR
6.7 7.5 8.2 V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
10 12 pF
ESD-Clamping voltage at ± 8 kV ESD-pulse
acc. IEC 61000-4-2
V
C-ESD
± 100 V
19741
L1
P1-P3P4-P6P7-P8

VESD05A2-03F-GS08

Mfr. #:
Buy VESD05A2-03F-GS08
Manufacturer:
Vishay
Description:
TVS DIODE 5V 11V SOT490
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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