© 2009 Microchip Technology Inc. Preliminary DS22136B-page 13
25LCXXXA
3.6 Write Status Register Instruction
(WRSR)
The Write Status Register instruction (WRSR) allows the
user to write to the nonvolatile bits in the STATUS
register as shown in Table 3-2. The user is able to
select one of four levels of protection for the array by
writing to the appropriate bits in the STATUS register.
The array is divided up into four segments. The user
has the ability to write-protect none, one, two or all four
of the segments of the array. The partitioning is
controlled as shown in Table 3-3.
See Figure 3-6 for the WRSR timing sequence.
TABLE 3-3: ARRAY PROTECTION
TABLE 3-4: ARRAY PROTECTED ADDRESS LOCATIONS
FIGURE 3-7: WRITE STATUS REGISTER TIMING SEQUENCE (WRSR)
BP1 BP0
Array Addresses
Write-Protected
Array Addresses
Unprotected
00
None All
01
Upper 1/4 Lower 3/4
10
Upper 1/2 Lower 1/2
11
All None
Density Upper 1/4 Upper 1/2 All
1K 60h - 7Fh
40h - 7Fh 00h - 7Fh
2K C0h - FFh
80h - FFh 00h - FFh
4K 180h - 1FFh
100h - 1FFh 000h - 1FFh
SO
SI
CS
9101112131415
0 1000000
7654
210
Instruction Data to STATUS Register
High-Impedance
SCK
0 2345671
8
3
Note: An internal write cycle (TWC) is initiated on the rising edge of CS after a valid write STATUS register
sequence.
25LCXXXA
DS22136B-page 14 Preliminary © 2009 Microchip Technology Inc.
4.0 DATA PROTECTION
The following protection has been implemented to
prevent inadvertent writes to the array:
The write enable latch is reset on power-up
A write enable instruction must be issued to set
the write enable latch
After a byte write, page write or STATUS register
write, the write enable latch is reset
•CS
must be set high after the proper number of
clock cycles to start an internal write cycle
Access to the array during an internal write cycle
is ignored and programming is continued
5.0 POWER-ON STATE
The 25LCXXXA powers on in the following state:
The device is in low-power Standby mode
(CS= 1)
The write enable latch is reset
SO is in high-impedance state
A high-to-low-level transition on CS
is required to
enter active state
TABLE 5-1: WRITE-PROTECT FUNCTIONALITY MATRIX
WP
(pin 3)
WEL
(SR bit 1)
Protected Blocks Unprotected Blocks STATUS Register
0 (low) x
Protected Protected Protected
1 (high) 0
Protected Protected Protected
1 (high) 1
Protected Writable Writable
x = don’t care
© 2009 Microchip Technology Inc. Preliminary DS22136B-page 15
25LCXXXA
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
Note: Custom marking available.
8-Lead SOIC
XXXXYYWW
XXXXXXXT
NNN
Example:
SN 0828
25L040AH
1L7
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
3
e
8-Lead SOIC Package Marking (Pb-Free)
Device Line 1 Marking
25LC010A 25L010AT
25LC020A 25L020AT
25LC040A 25L040AT
Note 1: T = Temperature Grade (H).

25LC010A-H/SN

Mfr. #:
Manufacturer:
Microchip Technology
Description:
EEPROM 1K, 128 X 8, 2.5V SER EE 150C
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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