USBQ50415E3/TR7

USBQ50403e3 – USBQ50424e3
Compliant
500 W, Unidirectional
Low Capacitance TVS Array
DESCRIPTION
This Transient Voltage Suppressor (TVS) is assembled in a QFN-143 package which has the
same pinout and footprint as the SOT-143 package. The configuration gives protection to 1
unidirectional data or interface line. It is designed for use in applications where low
capacitance protection is required at the board level from voltage transients caused by
electrostatic discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per
IEC 61000-4-4 and the secondary effects of lightning. These TVS arrays have a peak power
rating of 500 watts for an 8/20 μs pulse (figure 1). With a capacitance of only 3 pF, this part
can provide protection to very fast data lines including USB at 900 Mbits/sec.
QFN-143
Also available:
Bidirectional
(QFN-143)
USBQ50403Ce3
USBQ50424Ce3
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Protects 1 unidirectional line
Surge protection per IEC 61000-4-2 and IEC 61000-4-4
Ultra low capacitance
Low profile surface mount package
RoHS compliant
APPLICATIONS / BENEFITS
EIA RS485 data rates: 5 Mbps
10 Base-T Ethernet
USB data rate 900 Mbps
MAXIMUM RATINGS @ 25 ºC unless otherwise noted
Parameters/Test Conditions
Symbol
Value
Unit
Storage Temperature
T
STG
-55 to +150
o
C
Junction Temperature
T
J
-55 to +125
o
C
Peak Pulse Power Dissipation with a 8/20μs waveform
(with a duty factor of 0.01%)
P
PP
500
W
Solder Temperature @ 10 s
260
o
C
MSC Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
HALOGEN
FREE
RF01086-1, Rev B (6/17/15) ©2015 Microsemi Corporation Page 1 of 5
USBQ50403e3 – USBQ50424e3
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: RoHS compliant annealed matte-tin plating. Readily solderable per MIL-STD-750, method 2026.
MARKING: Body marked with part number code (Qxx).
POLARITY: Dot in corner indicates pin 1.
TAPE-AND-REEL: Standard per EIA-481-B (add “TR” suffix to part number). Consult factory for quantities.
Approximately 16.53 milligrams
See Package Dimensions
on last page.
USB Q 5 04 03 e3
USB Suitable
QFN-143 Package
500 W P
PP
Rating
RoHS Compliant
Rated Standoff Voltage (V
WM
)
(see Electrical Characteristics
table)
4 Pin Package
SYMBOLS & DEFINITIONS
Symbol
Definition
α
V(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
I
(BR)
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR).
I
D
Standby Current: The current through the device at rated stand-off voltage.
I
PP
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
V
(BR)
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
V
C
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
V
WM
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
PART
NUMBER
DEVICE
MARKING
STAND-
OFF
VOLTAGE
V
WM
Volts
BREAKDOWN
VOLTAGE
V
BR
@ 1 mA
Volts
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure 2)
Volts
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure 2)
Volts
STANDBY
CURRENT
I
D
@ V
WM
µA
CAPACITANCE
(f= 1 MHz)
C
@ 0 V
pF
TEMPERATURE
COEFFICIENT
OF V
BR
α
VBR
mV/°C
MAX
MIN
MAX
MAX
MAX
MAX
MAX
USBQ50403e3
Q03
3.3
4.0
8.0
11
200
3
-5
USBQ50405e3
Q05
5.0
6.0
10.8
12
40
3
1
USBQ50412e3
Q12
12.0
13.3
19.0
26
1
3
8
USBQ50415e3
Q15
15.0
16.7
24.0
32
1
3
11
USBQ50424e3
Q24
24.0
26.7
43.0
57
1
3
28
RF01086-1, Rev B (6/17/15) ©2015 Microsemi Corporation Page 2 of 5
USBQ50403e3 – USBQ50424e3
tpPulse Time µs
FIGURE 1
Peak Pulse Power vs. Pulse Time
time µs
FIGURE 2
Pulse Waveform
P
PP
Peak Pulse Power - W
I
PP
Peak Pulse Current - % I
PP
RF01086-1, Rev B (6/17/15) ©2015 Microsemi Corporation Page 3 of 5

USBQ50415E3/TR7

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Diode Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union