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NTR4101PT1H

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
October, 2016 − Rev. 12
1 Publication Order Number:
NTR4101P/D
NTR4101P, NTRV4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
• Leading −20 V Trench for Low R
DS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• NTRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−2.4
A
T
A
= 85°C −1.7
t ≤ 10 s T
A
= 25°C −3.2
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.73
W
t ≤ 10 s 1.25
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−1.8
A
T
A
= 85°C −1.3
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.42 W
Pulsed Drain Current
tp = 10 ms
I
DM
−18 A
ESD Capability (Note 3) C = 100 pF,
RS = 1500 W
ESD 225 V
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−2.4 A
Single Pulse Drain−to−Source Avalanche
Energy (V
GS
= −8 V, I
L
= −1.8 Apk, L = 10 mH,
R
G
= 25 W)
EAS 16 mJ
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
S
G
D
Device Package Shipping
†
ORDERING INFORMATION
P−Channel MOSFET
SOT−23
CASE 318
STYLE 21
TR4 MG
G
TR4 = Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
1
Gate
2
1
3
2
Source
NTR4101PT1G
www.onsemi.com
SOT−23
(Pb−Free)
3000 / Tape &
Reel
V
(BR)DSS
R
DS(ON)
TYP I
D
MAX
−20 V
70 mW @ −4.5 V
−3.2 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
(Note: Microdot may be in either location)
NTRV4101PT1G
90 mW @ −2.5 V
112 mW @ −1.8 V
NTR4101P, NTRV4101P
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
R
q
JA
100
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(V
GS
= 0 V, I
D
= −250 mA)
V
(BR)DSS
−20 V
Zero Gate Voltage Drain Current (Note 4)
(V
GS
= 0 V, V
DS
= −16 V)
I
DSS
−1.0
mA
Gate−to−Source Leakage Current
(V
GS
= ±8.0 V, V
DS
= 0 V)
I
GSS
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(V
GS
= V
DS
, I
D
= −250 mA)
V
GS(th)
−0.4 −0.72 −1.2 V
Drain−to−Source On−Resistance
(V
GS
= −4.5 V, I
D
= −1.6 A)
(V
GS
= −2.5 V, I
D
= −1.3 A)
(V
GS
= −1.8 V, I
D
= −0.9 A)
R
DS(on)
70
90
112
85
120
210
mW
Forward Transconductance (V
DS
= −5.0 V, I
D
= −2.3 A) g
FS
7.5 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
(V
GS
= 0 V, f = 1 MHz, V
DS
= −10 V)
C
iss
675 pF
Output Capacitance C
oss
100
Reverse Transfer Capacitance C
rss
75
Total Gate Charge (V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −1.6 A) Q
G(tot)
7.5 8.5 nC
Gate−to−Source Gate Charge (V
DS
= −10 V, I
D
= −1.6 A) Q
GS
1.2 nC
Gate−to−Drain “Miller” Charge (V
DS
= −10 V, I
D
= −1.6 A) Q
GD
2.2 nC
Gate Resistance R
G
6.5
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −1.6 A, R
G
= 6.0 W)
t
d(on)
7.5
ns
Rise Time t
r
12.6
Turn−Off Delay Time t
d(off)
30.2
Fall Time t
f
21.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (V
GS
= 0 V, I
S
= −2.4 A) V
SD
−0.82 −1.2 V
Reverse Recovery Time
(V
GS
= 0 V,
dI
SD
/dt = 100 A/ms, I
S
= −1.6 A)
t
rr
12.8 15 ns
Charge Time t
a
9.9 ns
Discharge Time t
b
3.0 ns
Reverse Recovery Charge Q
rr
1008 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
NTR4101P, NTRV4101P
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
08
100
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100000
1.0
−I
DSS
, LEAKAGE (nA)
10000
10
1000
46
T
J
= 125°C
2
V
GS
= 0 V
10 12 14 1
6
.
125°C
0
10
5
8
632
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
6
2
0
1
Figure 1. On−Region Characteristics
0
6
24
10
1
0
6
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.02
79
0.04
0
Figure 3. On−Resistance vs. Drain Current and
Temperature
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
−I
D,
DRAIN CURRENT (AMPS)
T
J
= 25°C
0.1
13
T
J
= −55°C
4
25°C
−1.6 V
−1.8 V
−2.0 V
−2.2 V
78
0.06
V
GS
= −10 V − −2.4 V
T = 125°C
4
0.08
5
3
4
8
0.01
0.03
0.05
0.07
0.09
T = 25°C
T = −55°C
V
GS
= −5.0 V
0.02
79
0.04
0
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.15
13
0.06
0.08
5
0.01
0.03
0.05
0.07
0.14
T
J
= 25°C
V
GS
= −2.5 V
Figure 4. On−Resistance vs. Drain Current an
d
Temperature
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= −1.6 A
−50 0−25 25
1.2
1.0
0.8
0.6
0.4
50 12510075
150
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
81
0
246
V
GS
= −4.5 V
0.10
0.12
0.09
0.11
0.13
T
J
= 150°C
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
2
V
DS
≥ 20 V
5
9
3
7
1
5
P1-P3P4-P5

NTR4101PT1H

Mfr. #:
Buy NTR4101PT1H
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET SOT23 20V 3.2A 85MO
Lifecycle:
New from this manufacturer.
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