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SQM70060EL_GE3

P1-P3P4-P6P7-P9P10-P10
SQM70060EL
www.vishay.com
Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16
1
Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
() at V
GS
= 10 V 0.0059
R
DS(on)
() at V
GS
= 4.5 V 0.0080
I
D
(A) 75
Configuration Single
Package TO-263
D
G
S
N-Channel MOSFET
TO-263
Top View
G
D
S
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
75
A
T
C
= 125 °C 67
Continuous Source Current (Diode Conduction)
a
I
S
75
Pulsed Drain Current
b
I
DM
180
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
60
Single Pulse Avalanche Energy E
AS
180 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
166
W
T
C
= 125 °C 55
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB mount
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
0.9
SQM70060EL
www.vishay.com
Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16
2
Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 100 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 100 V - - 1
μA V
GS
= 0 V V
DS
= 100 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 100 V, T
J
= 175 °C - - 500
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 50 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 30 A - 0.0046 0.0059
V
GS
= 10 V I
D
= 30 A, T
J
= 125 °C - - 0.0099
V
GS
= 10 V I
D
= 30 A, T
J
= 175 °C - - 0.0123
V
GS
= 4.5 V I
D
= 20 A - 0.0056 0.0080
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 25 A - 95 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 4170 5500
pF Output Capacitance C
oss
- 1935 2600
Reverse Transfer Capacitance C
rss
- 160 220
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 50 V, I
D
= 50 A
-66100
nC Gate-Source Charge
c
Q
gs
-14-
Gate-Drain Charge
c
Q
gd
-12-
Gate Resistance R
g
f = 1 MHz 0.90 1.92 3
Turn-On Delay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 1.08
I
D
50 A, V
GEN
= 10 V, R
g
= 1
-1325
ns
Rise Time
c
t
r
-2135
Turn-Off Delay Time
c
t
d(off)
-3460
Fall Time
c
t
f
-1325
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--180A
Forward Voltage V
SD
I
F
= 50 A, V
GS
= 0 - 0.90 1.5 V
SQM70060EL
www.vishay.com
Vishay Siliconix
S16-0653-Rev. A, 18-Apr-16
3
Document Number: 67764
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
40
80
120
160
200
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 4 V
V
GS
= 3 V
10
100
1000
10000
0
25
50
75
100
125
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
1600
3200
4800
6400
8000
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0
35
70
105
140
175
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
0.003
0.006
0.009
0.012
0.015
0 20406080100120
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0 20406080100
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
I
D
= 50 A
V
DS
= 50 V
P1-P3P4-P6P7-P9P10-P10

SQM70060EL_GE3

Mfr. #:
Buy SQM70060EL_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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