ZVN4306AV Datasheet ZVN4306AV, ZVN4306AVSTOB, ZVN4306AVSTZ | P1-P3

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 1 – FEBRUARY 95

FEATURES

* 60 Volt V

DS

*R

DS(on)

= 0.33Ω

* Repetitive Avalanche Rating

APPLICATIONS

* Solenoids / relay drivers for automotive

* Stepper Motor Drivers

* DC-DC convertors

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

DS

60 V

Continuous Drain Current at T

amb

=25°C I

D

1.1 A

Practical Continuous Drain Current at

T

amb

=25°C

I

DP

1.3 A

Pulsed Drain Current I

DM

15 A

Gate Source Voltage V

GS

± 20

V

Power Dissipation at T

amb

=25°C P

tot

850 mW

Practical Power Dissipation at T

amb

=25°C* P

totp

1.13 W

Avalanche Current-Repetitive I

AR

1A

Avalanche Energy-Repetitive E

AR

25 mJ

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.

with copper equal to 1 inch square minimum

E-Line

TO92 Compatible

ZVN4306AV

D

G

S

ZVN4306AV

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BV

DSS

60 V I

D

=1mA, V

GS

=0V

Gate-Source

Threshold Voltage

V

GS(th)

1.3 3 V I

D

=1mA, V

DS

=V

GS

Gate-Body Leakage I

GSS

100 nA

V

GS

=± 20V, V

DS

=0V

Zero Gate Voltage

Drain Current

I

DSS

10

100

µA

V

DS

=60V, V

GS

=0

V

DS

=48V, V

GS

=0V, T=125°C(2)

On-State Drain

Current(1)

I

D(on)

12 A V

DS

=10V, V

GS

=10V

Static Drain-Source

On-State Resistance

(1)

R

DS(on)

0.22

0.32

0.33

0.45

Ω

V

GS

=10V,I

D

=3A

V

GS

=5V, I

D

=1.5A

Forward

Transconductance

(1)(2)

g

fs

700 mS V

DS

=25V,I

D

=3A

Input Capacitance (2) C

iss

350 pF

Common Source

Output Capacitance (2)

C

oss

140 pF V

DS

=25 V, V

GS

=0V, f=1MHz

Reverse Transfer

Capacitance (2)

C

rss

30 pF

Turn-On Delay Time

(2)(3)

t

d(on)

8ns

V

DD

≈25V, V

GEN

=10V, I

D

=3A

Rise Time (2)(3) t

r

25 ns

Turn-Off Delay Time

(2)(3)

t

d(off)

30 ns

Fall Time (2)(3) t

f

16 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

TYPICAL CHARACTERISTICS

Saturation Characteristics

V

DS

- Drain Source Voltage (Volts)

012345678910

I

D

- Drain Current (Amps)

Normalised R

DS(on)

and V

GS(th)

v Temperature

T

j

-Junction Temperature (°C)

Normalised R

DS(

o

n)

a

n

d V

GS(th)

-50

-25 0 25 50 75

100

150

125 175 200

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Drai

n

-

S

o

u

rc

e R

esi

s

ta

n

c

e R

D

S

(

o

n

)

Gate Threshold Voltage V

GS(TH)

I

D=

3A

V

GS=

10V

I

D=

1mA

V

GS=

V

DS

2.6

225

0

4

1

2

7

6

5

3

10

9

8

10V

8V

9V

7V

5V

4V

6V

3.5V

V

GS=

20V

12V

On-resistance v drain current

I

D-

Drain Current

(Amps)

R

DS(on)

-Drain Source On Resistance

(Ω)

0.1

10

100

3.5V

5V

V

GS

=3V 6V

0.1

10

1.0

1

10V

3V

12

11

V

DS

-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

C-Capacitance (pF)

C

oss

C

iss

C

rss

01020 304050607080

0

300

200

100

400

500

Q-Charge (nC)

V

G

S

-Gate Source Voltage (V

olts)

Gate charge v gate-source voltage

0

10

8

6

2

0

4

12

14

16

V

DD

=

20V

I

D=

3A

40V

60V

123456789101112

Transconductance v drain current

I

D(on)

- Drain Current (Amps)

g

f

s

-T

ransconductance (S)

02

4

6810

V

DS=

10V

0

1

2

4

3

5

12

14

16 18 20

8V

ZVN4306AV

ZVN4306AV

ZVN4306AV

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