RPI-121
Photointerrupter, Ultraminiature type
Applications
Optical control equipment
Cameras
Floppy disk drives
Features
1) Ultra-small.
2) Minimal influence from stray light.
3)
Low collector-emitter saturation voltage.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
External dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
Gap
Collector
Optical axis center
Anode
Cathode Emitter
Cross-section A-A
Through hole
A
A
4-φ0.8
C0.7
2-R0.1
2-R0.3
2
2.65
(0.5)
0.4
4-0.5
4-0.4
(2)
4-0.2
(2.65)
0.8
1
Min.2
3.3
2.3
1.5 2.6
3.6
RELATIVE COLLECTOR CURRENT : IC (%)
DISTANCE : d (mm)
0 1.0 2.00.5 1.5 2.5
100
125
50
75
25
0
d
RELATIVE COLLECTOR CURRENT : IC (%)
DISTANCE : d (mm)
0 1.0 2.00.5 1.5 2.5
100
125
50
75
25
0
COLLECTOR CURRENT : IC
(mA)
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
4861020
0
2
4
6
8
10
IF=50mA
40mA
30mA
20mA
10mA
COLLECTOR CURRENT : IC (mA)
100.05 0.1 1
1
10
100
RESPONSE TIME : tr (µs)
RL=100Ω
RL=1kΩ
RL=500Ω
−20 0 20 40 60 80 100
10
50
40
30
20
0
AMBIENT TEMPERATURE : Ta (˚C)
FORWARD CURRENT : IF (mA)
AMBIENT TEMPERATURE : Ta (˚C)
DARK CURRENT : ICEO (nA)
0 25 50 75 100−25
0.1
1
10
100
1000
VCE=20V
V
CE=10V
V
CE=30V
COLLECTOR CURRENT : IC (mA)
FORWARD CURRENT : IF (mA)
0 1020304050
0
1
2
3
4
5
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : P
D/PC (mW)
AMBIENT TEMPERATURE : Ta (˚C)
−20 0 40 60 8020 100
0
20
40
60
80
100
120
PD PC
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
0
10
20
30
40
50
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8
75˚C
50˚C
25˚C
0˚C
−25˚C
RELATIVE COLLECTOR CURRENT : IC (%)
AMBIENT TEMPERATURE : Ta (˚C)
−40 −200 20406080100
80
100
0
20
40
60
120
140
160
d
Fig.1 Relative output current vs.
distance ( )
Fig.4 Relative output current vs.
distance ( )
Fig.2 Forward current falloff
Fig.10 Output characteristics
Delay time
Rise time (time for output current to rise from
10% to 90% of peak current)
Fall time (time for output current to fall from 90%
to 10% of peak current)
td :
tr :
tf :
Fig.11 Response time measurement circuit
td
tr
tf
10%
90%
RL
VCCInput
Input
Output
Output
Fig.8 Response time vs.
collector current
Fig.9 Dark current vs.
ambient temperature
Fig.6 Relative output vs. ambient
temperature
Fig.7 Collector current vs.
forward current
Fig.3 Forward current vs. forward
voltage
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation
voltage
Response time
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Parameter Symbol Min. Typ. Max. Unit Conditions
VF
−
1.3 1.6 V IF 50mA
IR
− −
10
µA VR 5V
ICEO
−
−
0.5 µA VCE 10V
−
800
−
nm
−
IC1 0.7
− −
mA VCE 5V, IF 20mA
IC2 0.2
− −
mA VCE 5V, IF 5m
VCE(sat)
− −
0.3 V IF 20mA, IC 0.3mA
tr tf
tr
tf
−
10
−
µs VCC 5V, IF 20mA, RL 100Ω
Cut-off frequency
∗ Non-coherent Infrared light emitting diode used.
Peak light emitting wavelength
λ
P
fC
IF=50mA
−
−
1
−
MHz
−
950
−
nm
Maximum sensitivity wavelength
λ
P
−
800
−
nm
∗ This product is not designed to be protected against electromagnetic wave.
VCC=5V, IC=1mA, RL=100Ω
Response time
−
10
−
µs
Photo
transistor
Infrared
light
emitter
diode
λ
P
=
=
=
==
=
==
== =
=
Parameter Symbol
I
C
VCEO
PD
VR
IF
PC
VECO
Topr
Tstg
Limits
−25 to +85
−40 to +100
50
5
80
30
4.5
30
80
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Input(LED)
Output
photo-
transistor
(
)
