MAX3664
622Mbps, Ultra-Low-Power, 3.3V
Transimpedance Preamplifier for SDH/SONET
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +3.3V ±0.3V, COMP = GND, 100Ω load between OUT+ and OUT-, T
A
= -40°C to +85°C. Typical values are at T
A
= +25°C,
unless otherwise noted.) (Notes 1, 2)
AC ELECTRICAL CHARACTERISTICS
(V
CC
= +3.3V ±0.3V, C
COMP
= 400pF, C
IN
= 1.1pF, outputs terminated into 50Ω, 8-pin SO package in MAX3664 EV board,
T
A
= +25°C, unless otherwise noted.) (Notes 3, 4)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 3: AC Characteristics are guaranteed by design.
Note 4: C
IN
is the total capacitance at IN.
Note 5: PWD =
|
2 x Pulse width - Period
|
2
Note 6: DC to 470MHz, measured with 3-pole Bessel filter at output.
Note 1: Dice are tested at T
j
= +27°C.
Note 2: µMAX package tested at T
A
= +25°C to +85°C.
V
CC
........................................................................-0.5V to +5.5V
Continuous Current
IN, INREF1, INREF2, COMP, FILT....................................5mA
OUT+, OUT-...................................................................25mA
Continuous Power Dissipation (T
A
= +85°C)
SO (derate 5.88mW/°C above +85°C)........................383mW
µMAX (derate 4.1mW/°C above +85°C) .....................268mW
Operating Junction Temperature (die)..............-40°C to +150°C
Processing Temperature (die).........................................+400°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering, 10sec).............................+300°C
I
IN
= 0
I
IN
= 0 to 20µA
I
IN
= 0 to 300µA
I
IN
= 300µA
Differential output
f < 1MHz, referred to output
I
IN
= 200µA, C
COMP
= 400pF
CONDITIONS
mA12 25 35I
CC
Supply Current
%±5
V0.8 0.95V
IN
Input Bias Voltage
Gain Nonlinearity
mV950V
OUT
(max)Maximum Output Voltage
Ω40 60 75Z
OUT
Output Impedance (per side)
kΩ4.5 6 7.5z
21
Small-Signal Transimpedance
VV
CC
- 1.3Output Common-Mode Level
dB20PSRRPower-Supply Rejection Ratio
mV±7∆V
OUT
Differential Output Offset
UNITSMIN TYP MAXSYMBOLPARAMETER
Relative to gain at 10MHz
C
IN
= 1.1pF (Note 6), I
IN
= 0
2µA to 100µA peak input current,
50% duty cycle, 1–0 pattern
100µA to 300µA peak input current,
50% duty cycle, 1–0 pattern
C
IN
= 0.3pF (Note 6), I
IN
= 0
CONDITIONS
kHz150
MHz590BW
-3dB
Small-Signal Bandwidth
Low-Frequency Cutoff
nA
73 86
i
n
RMS Noise Referred to Input
6 100
ps
80 200
PWD
Pulse-Width Distortion
(Note 5)
55
UNITSMIN TYP MAXSYMBOLPARAMETER
Ω800 1000 1200R
FILT
Filter Resistor (die only)
