BCX6825TA Datasheet BCX6825TA | P1-P3

BCX6825

Da

tasheet Number: DS33010 Rev. 4 - 2

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20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89

Features

• BV

CEO

> 20V

• High current capability Maximum Continuous Current I

C

= 1A

• Low saturation voltage V

CE(sat)

< 500mV @ 1A

• Complementary PNP type: BCX69

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free, “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Application

• Power MOSFET gate driving

• Low loss power switching

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding Compound

• Moisture Sensitivity: Level 1 per J-STD-020

• UL Flammability Rating 94V-0

• Terminals: Matte Tin Finish

• Weight: 0.052 grams (Approximate)

Ordering Information (Notes 3 & 4)

Product Status Marking Reel size (inches) Tape width (mm) Quantity per reel

BCX6825TA Commercial CD 7 12 1000

BCX6825QTA Automotive CD 7 12 1000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.

Marking Information

Top View

SOT89

Device symbol Top View

Pin-out

CD = Product Type Marking Code

CD

C

E

C

B

C

E

B

BCX6825

Da

tasheet Number: DS33010 Rev. 4 - 2

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Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

25 V

Collector-Emitter Voltage

V

CEO

20 V

Emitter-Base Voltage

V

EBO

5 V

Continuous Collector Current

I

C

1 A

Peak Pulse Current

I

CM

2 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector Power Dissipation

P

D

1 W

Thermal Resistance, Junction to Ambient Air (Note 5)

R

θJA

125

°C/W

Thermal Resistance, Junction to Leads (Note 6)

R

θJL

10.01

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-65 to +150

°C

Notes: 5. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6.Thermal resistance from junction to solder-point (on the exposed collector pad).

Thermal Characteristics

0 25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

120

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

1

10

100

Single Pulse. T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

BCX6825

Da

tasheet Number: DS33010 Rev. 4 - 2

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Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ. Max Unit Test Condition

Collector-Base Breakdown Voltage

BV

CBO

25 - - V

I

C

= 100µA

Collector-Emitter Breakdown Voltage (Note 7)

BV

CEO

20 - - V

I

C

= 10mA

Emitter-Base Breakdown Voltage

BV

EBO

5 - - V

I

E

= 100µA

Collector Cutoff Current

I

CBO

- -

100

10

nA

µA

V

CB

= 25V

V

CB

= 25V, T

A

= 125°C

Emitter Cutoff Current

I

EBO

- - 10 µA

V

EB

= 5V

DC current transfer Static ratio (Note 7)

h

FE

50

160

60

-

250

-

400

-

I

C

= 5mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 1V

I

C

= 1A, V

CE

= 1V

Collector-Emitter Saturation Voltage (Note 7)

V

CE

(

sat

)

-

0.5 V

I

C

= 1A, I

B

= 100mA

Base-Emitter Turn-on Voltage (Note 7)

V

BE

(

on

)

- - 1.0 V

I

C

= 1A, V

CE

= 1V

Transitional Frequency

f

T

100 - - MHz

I

C

= 100mA, V

CE

= 5V

f = 100MHz

Output capacitance

C

obo

- - 25 pF

V

CB

= 10V, f = 1MHz

Notes: 7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

Typical Characteristics

BCX6825TA

BCX6825TA

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