MSKD120_MSAD120_MSCD120 - Rev 1 www.microsemi.com
Dec, 2009 1/4
MSKD120 ; MSAD120 ; MSCD120
Module Type
TYPE
VRRM VRSM
MSKD120-08
MSKD120-12
MSKD120-16
MSKD120-18
MSAD120-08
MSAD120-12
MSAD120-16
MSAD120-18
MSCD120-08
MSCD120-12
MSCD120-16
MSCD120-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
IFAV
Tc=100℃
120 A
IFSM
t=10mS Tv
=45℃
2800 A
i
2
t
t=10mS Tv
=45℃
39200
A
2
s
Visol
a.c.50Hz;r.m.s.;1min 3000 V
Tvj
-40 to 150
℃
Tstg
-40 to 125
℃
Mt To terminals(M5)
2．5-4
Nm
Ms To heatsink(M5)
2．5-4
Nm
Weight Module 110 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c)
Per diode 0.26
℃
W
Rth(c-s)
Module 0.1
℃
W
Electrical Characteristics
Circuit
MSKD
1
3
2
MSAD
1
3
2
MSCD
1
3
2
Glass Passivated Rectifier
Diode Modules
V
RRM 800 to 1800V
IFAV 120 Amp
Applications
y Non-controllable rectifiers for AC/AC
converters
y Line rectifiers for transistorized AC motor
controllers
y Field supply for DC motors
Features
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide ceramic
isolated metal baseplate
y Glass passivated chip
Symbol Conditions Values Units
VFM
T=25℃ IFM =300A
1.43 V
IRD
T
vj=TvjM VRD=VRRM ≤6 mA
