LT5570
10
5570f
TEST CIRCUITS
Figure 3. Test Schematic for 40MHz to 860MHz Applications
Figure 4. Top Side of Evaluation Board for 40MHz to 860MHz Applications
1
2
4
5
3
2
1
4
5
3
10
9
7
6
8
V
CC
IN
+
IN
GND
FLTR
EN
DNC
OUT
DNCDEC
RF
INPUT
C1
22nF
5V
ENABLE
OUT
NC
NC
1:4
T2
ETC4-1-2
J1
5570 F03
C6
(OPT)
LT5570
EXPOSED PAD
C2
1nF
C7
1nF
L1
0
C9
0
C3
1MF
R1
100k
C4
1nF
C8
OPT
REF DES VALUE SIZE PART NUMBER
C2, C4, C7 1nF 0402 AVX 0402ZCI02KAT
C1 22nF 0402 AVX 0402YC223KAT
C3 1μF 0603 Taiyo Yuden LMK107BJ105MA
REF DES VALUE SIZE PART NUMBER
R1 100k 0402 CRCW0402100KFKED
T2 1:4 ETC4-1-2
C8 OPT 0402
C9, L1 0 0402 CJ05-000M
LT5570
11
5570f
The LT5570 is a mean-squared RF power detector, capable
of measuring an RF signal over the frequency range from
40MHz to 2.7GHz, independent of input waveforms with
different crest factors such as CW, CDMA, WCDMA, TD-
SCDMA and WiMAX signals. A wide dynamic range is
achieved with very stable output within the full temperature
range from –40˚C to 85˚C.
RF Inputs
The differential RF inputs are internally biased at
V
CC
– 1.224V. The differential impedance is about 200Ω.
These pins should be DC blocked when connected to
ground or other matching components. The impedance
vs. frequency of the differential RF input is detailed in the
following table.
Figure 5. Single-Ended Input Confi guration
The LT5570’s differential inputs are optimally driven from
a fully balanced source. When the signal is from a single-
ended 50Ω source, conversion to a differential signal is
required to achieve the maximum dynamic range. This
is best achieved using a 1:4 balun to match the internal
200Ω input impedance as shown in Figures 1 and 3. This
impedance transformation results in 6dB voltage gain. At
high frequency, additional LC elements may be needed
for input impedance matching due to the parasitics of the
transformer and PCB trace.
The approximate RF input power range of the LT5570 is
60dB at frequencies up to 900MHz, even with high crest
factor signals such as a 4-carrier W-CDMA waveform.
However the minimum detectable RF power level degrades
as the input RF frequency increases.
Due to the high RF input impedance of the LT5570, a
narrow band L-C matching network can be used for the
conversion of a single-ended to balanced signal as well.
By this means, the sensitivity and overall linear dynamic
range of the detector remain the same, without using an
RF balun.
The LT5570 can also be driven in a single-ended con-
guration. Figure 5 shows the simplifi ed circuit of this
single-ended confi guration. The DEC Pin is preferably ac-
coupled to ground via a capacitor rather than left fl oating.
APPLICATIONS INFORMATION
Table 1. RF Differential Input Impedance
FREQUENCY
(MHz)
DIFFERENTIAL INPUT
IMPEDANCE (Ω)
S11
MAG ANGLE (°)
40 204 –j 0.6 0.606 –0.1
100 204 –j 1.8 0.606 –0.3
200 204 –j 3.6 0.606 –0.5
400 203.5 –j 7.3 0.606 –1.1
600 202.8 –j 10.9 0.605 –1.6
800 201.8 –j 14.5 0.604 –2.1
1000 200.6 –j17.9 0.603 –2.7
1200 199.1 –j21.3 0.602 –3.2
1400 197.3 –j24.7 0.601 –3.8
1600 195.4 –j27.9 0.599 –4.4
1800 193.2 –j31.1 0.598 –5.0
2000 190.8 –j34.2 0.596 –5.6
2200 188.2 –j37.4 0.593 –6.2
2400 185.3 –j40.4 0.591 –6.9
2600 181.9 –j43.5 0.589 –7.6
2800 178.3 –j46.4 0.586 –8.4
3000 174.4 –j49.3 0.582 –9.2
10071nF
IN
+
DEC
IN
RF
INPUT
1nF
1007
1007
5570 F05
LT5570
LT5570
12
5570f
APPLICATIONS INFORMATION
The DEC pin can be tied to the IN
+
(or IN
) Pin directly
and ac-coupled to ground while the RF signal is applied
to the IN
(or IN
+
) Pin. By simply terminating the signal
side of the inputs with a 100Ω resistor to ground in front
of the ac-blocking capacitor and coupling the other side
to ground using a 1nF capacitor, a broadband 50Ω input
match can be achieved with typical input return loss better
than 12dB from 40MHz to 2.7GHz.
Since there is no voltage conversion gain from imped-
ance transformation in this case, the sensitivity of the
detector is reduced by 6dB. The linear dynamic range is
reduced by the same amount correspondingly as shown
in Figure 6.
External Filtering (FLTR) Capacitor C1
This pin is internally biased at V
CC
– 0.13V via a 2k resistor
from voltage supply V
CC
. To assure stable operation of the
LT5570, an external capacitor C1 with a value of 22nF or
higher is required to connect the FLTR Pin to V
CC
. Don’t
connect this fi ltering capacitor to ground or any other
low voltage reference at any time to avoid an abnormal
start-up condition.
Figure 6. Output Voltage and Linearity Error vs
RF Input Power in Single-ended Input Confi guration
Figure 7. Residual Ripple, Output Transient
Times vs. Filtering Capacitor C1
C1’s value has a dominant effect on the output transient
response. The lower the capacitance, the faster the output
rise and fall times as illustrated in Figure 7. For signals
with AM content such as W-CDMA, ripple can be observed
when the loop bandwidth set by C1 is close to the modu-
lation bandwidth of the signal. A 4-carrier W-CDMA RF
signal is used as an example in this case. The trade-offs
of residual ripple vs. output transient time are also as
shown in Figure 7.
In general, the LT5570 output ripple remains relatively
constant regardless of the RF input power level for a fi xed
C1 and modulation format of the RF signal. Typically, C1
must be selected to average out the ripple to achieve the
desired accuracy of RF power measurement. For a two-tone
RF signal with equal power applied to the LT5570 input,
Figure 8 shows the variation of the output dc voltage and
its RMS value of the residual ac voltage as a function of
the delta frequency. Both values are referred to dB by
normalizing them to the output slope (about 37mV/dB).
In this measurement, C1 = 22nF. Increasing C1 will shift
both curves toward a lower frequency.
INPUT POWER (dBm)
–50
V
OUT
(V)
1.6
2.0
2.4
5570 F06
1.2
0.8
0.0
–30
0
–40
–10
–20
10
0.4
500MHz
880MHz
2140MHz
2700MHz
EXTERNAL FILTERING CAPACITOR C1 (μF)
0
RESIDUAL RIPPLE (mV
RMS
)
RISE AND FALL TIMES (μs)
40
35
30
25
20
15
10
5
0
320
280
240
200
160
120
80
40
0
0.8
5570 F07
0.2 0.4 0.6 1.00.70.1 0.3 0.5 0.9
RESIDUAL RIPPLE
RISE TIME
FALL TIME
AT 2140MHZ, P
IN
= 10dBm

LT5570IDD#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Detector Fast Responding, 40MHz to 2.7GHz Mean-Squared Power Detector
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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