© 2008 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
20080227a
VTO 110
VTO 175
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V
1300 1200 VTO 110-12io7 VTO 175-12io7
1500 1400 VTO 110-14io7 VTO 175-14io7
1700 1600 VTO 175-16io7
Features
●
Package with screw terminals
●
Isolation voltage 3000 V~
●
Planar passivated chips
●
UL registered E72873
Applications
●
Input rectifier for PWM converter
●
Input rectifier for switch mode power
supplies (SMPS)
●
Softstart capacitor charging
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
I
dAVM
= 110/167 A
V
RRM
= 1200-1600 V
Symbol Test Conditions Maximum Ratings
VTO 110 VTO 175
I
dAV
T
C
= 85°C; module 110 167 A
I
FRMS
, I
TRMS
per leg 58 89 A
I
FSM
, I
TSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 1150 1500 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 1230 1600 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 1000 1350 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 1070 1450 A
I
2
t T
VJ
= 45°C t = 10 ms (50 Hz), sine 6600 11200 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 6280 10750 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 5000 9100 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 4750 8830 A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 50 A 150 A/µs
f =400 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.3 A, non repetitive 500 A/µs
di
G
/dt = 0.3 A/µs, I
T
= 1/3 • I
dAV
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000 V/µs
R
GK
= ∞; method 1 (linear voltage rise)
V
RGM
10 V
P
GM
T
VJ
= T
VJM
t
p
=30µs ≤ 10 W
I
T
= I
TAVM
t
p
= 500 µs ≤ 5W
t
p
=10ms ≤ 1W
P
GAVM
0.5 W
T
VJ
-40...+125 °C
T
VJM
125 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
≤ 1 mA t = 1 s 3000 V~
M
d
Mounting torque (M6) 5-15 Nm
Terminal connection torque (M6) 5-15 lb.in.
Weight typ. 300 g
Three Phase Full Controlled
Rectifier Bridge, B6C
A
B
2
31
5
4
6
E
D
C
A
+
B
-
1
2
3
4
5
6
E
~
D
~
C
~
Preliminary data
