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APT2X31D60J

P1-P3P4-P4
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
APT2X31D60J 600V 30A
APT2X30D60J 600V 30A
053-6003 Rev G 2-2005
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
New Diode Data Sheet By Darel Bidwell
®
APT Website - http://www.advancedpower.com
Anti-Parallel Parallel
2
1
32 3
41 4
APT2X30D60J APT2X31D60J
S
O
T
-2
2
7
ISOTOP
®
"UL Recognized"
1
2
3
4
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
µA
pF
MIN TYP MAX
1.6 1.8
1.9
1.4
250
500
44
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 30A
I
F
= 60A
I
F
= 30A, T
J
= 125°C
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 112°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
T
J
,T
STG
T
L
UNIT
Volts
Amps
°C
APT2X31_31D60J
600
30
49
320
-55 to 175
300
DUAL DIE ISOTOP
®
PACKAGE
APT2X31_30D60J
DYNAMIC CHARACTERISTICS
053-6003 Rev G 2-2005
APT Reserves the right to change, without notice, the specifications and information contained herein.
New Diode Data Sheet By Darel Bidwell
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
θJC
R
θJA
W
T
Torque
MIN TYP MAX
1.2
20
1.03
29.2
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
MIN TYP MAX
- 23
- 85
- 130
- 4 -
-
160
- 700
-
8 -
- 70
- 1300
- 30
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 30A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 25°C
I
F
= 30A, di
F
/dt = -200A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 30A, di
F
/dt = -1000A/µs
V
R
= 400V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
0.320 °C/W
0.515
°C/W
0.375
°C/W
0.00278 J/°C
0.0421 J/
°C
0.242 J/
°C
Power
(watts)
Junction
temp
(°C)
RC MODEL
Case temperature (°C)
053-6003 Rev G 2-2005
APT2X31_30D60J
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
R
= 400V
15A
30A
60A
200
180
160
140
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/µs)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs) -di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 150°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 175°C
T
J
= 125°C
V
R
= 400V
60A
15A
30A
100
80
60
40
20
0
1800
1600
1400
1200
1000
800
600
400
200
0
0 0.5 1 1.5 2 2.5 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
T
J
= 125°C
V
R
= 400V
60A
30A
15A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
P1-P3P4-P4

APT2X31D60J

Mfr. #:
Buy APT2X31D60J
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
Lifecycle:
New from this manufacturer.
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