BC847BVC-7 Datasheet BC847BVC-7 | P1-P3

BC847BVC

Document number: DS30638 Rev. 6 - 2

1 of 6

www.diodes.com

April 2017

BC847BVC

NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

 BV

CEO

> 45V

 Ultra-Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT563

 Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD-

202, Method 208

 Weight 0.002 grams (Approximate)

Ordering Information (Note 4)

Product

Compliance

Marking

Reel Size (inches)

Tape Width (mm)

Quantity per Reel

BC847BVC-7

AEC-Q101

4VK

7

8mm

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2017

2018

2019

2020

2021

2022

2023

2024

2025

2026

2027

Code

E

F

G

H

I

J

K

L

M

N

O

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

Bottom View

Device Schematic

C

1

B

2

E

2

C

2

E

1

B

1

4VK = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: E = 2017)

M = Month (ex: 9 = September)

4VK

YM

e3

BC847BVC

Document number: DS30638 Rev. 6 - 2

2 of 6

www.diodes.com

April 2017

BC847BVC

Absolute Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

50

V

Collector-Emitter Voltage

V

CEO

45

V

Emitter-Base Voltage

V

EBO

6.0

V

Collector Current

I

C

100

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

150

mW

Thermal Resistance, Junction to Ambient (Note 5)

R



JA

833

C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

C

ESD Ratings (Note 6)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

200

V

B

Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

BC847BVC

Document number: DS30638 Rev. 6 - 2

3 of 6

www.diodes.com

April 2017

BC847BVC

Thermal Characteristics and Derating Information

-50

0 50 100 150

250

200

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 2)

A

°

P , POWER DISSIPATION (mW)

D

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

V

(BR)CBO

50

—

V

I

C

= 10A, I

B

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

45

—

V

I

C

= 10mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

6

—

V

I

E

= 1A, I

C

= 0

DC Current Gain (Note 7)

h

FE

200

290

450

—

V

CE

= 5.0V, I

C

= 2.0mA

Collector-Emitter Saturation Voltage (Note 7)

V

CE(SAT)

—

100

300

mV

I

C

= 10mA, I

B

= 0.5mA

I

C

= 100mA, I

B

= 5.0mA

Base-Emitter Saturation Voltage (Note 7)

V

BE(SAT)

—

700

900

—

mV

I

C

= 10mA, I

B

= 0.5mA

I

C

= 100mA, I

B

= 5.0mA

Base-Emitter Voltage

V

BE

580

—

660

—

700

770

mV

V

CE

= 5.0V, I

C

= 2.0mA

V

CE

= 5.0V, I

C

= 10mA

Collector-Emitter Cutoff Current

I

CBO

I

CBO

—

15

5.0

nA

µA

V

CB

= 30V

V

CB

= 30V, T

A

= +150°C

Gain Bandwidth Product

f

T

100

—

MHz

V

CE

= 5.0V, I

C

= 10mA,

f = 100MHz

Output Capacitance

C

OBO

—

4.5

pF

V

CB

= 10V, f = 1.0MHz

Noise Figure

NF

—

10

dB

V

CE

= 5V, R

S

= 2.0k

f = 1.0kHz, BW= 200Hz

Note: 7. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.

Fig. 1 Power Dissipation vs. Ambient Temperature

BC847BVC-7

BC847BVC-7

Products related to this Datasheet