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74HC2G17GW-Q100H

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
74HC_HCT2G17_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 22 May 2013 6 of 19
NXP Semiconductors
74HC2G17-Q100; 74HCT2G17-Q100
Dual non-inverting Schmitt trigger
V
OL
LOW-level output voltage V
I
= V
T+
or V
T
I
O
= 20 A; V
CC
= 2.0 V - - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - - 0.4 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 6.0 V - - 1.0 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 6.0 V
- - 20.0 A
Table 7. Static characteristics for 74HC2G17
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Static characteristics for 74HCT2G17
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 25 C
V
OH
HIGH-level output voltage V
I
= V
T+
or V
T
; V
CC
= 4.5 V
I
O
= 20 A4.44.5-V
I
O
= 4.0 mA 4.18 4.32 - V
V
OL
LOW-level output voltage V
I
= V
T+
or V
T
; V
CC
= 4.5 V
I
O
= 20 A-00.1V
I
O
= 4.0 mA - 0.15 0.26 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - 0.1 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
--1.0A
I
CC
additional supply current V
I
= V
CC
2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 300 A
C
I
input capacitance - 2.0 - pF
T
amb
= 40 C to +85 C
V
OH
HIGH-level output voltage V
I
= V
T+
or V
T
; V
CC
= 4.5 V
I
O
= 20 A 4.4--V
I
O
= 4.0mA 4.13--V
V
OL
LOW-level output voltage V
I
= V
T+
or V
T
; V
CC
= 4.5 V
I
O
= 20 A--0.1V
I
O
= 4.0 mA - - 0.33 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - 1.0 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
- - 10.0 A
I
CC
additional supply current V
I
= V
CC
2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 375 A
74HC_HCT2G17_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 22 May 2013 7 of 19
NXP Semiconductors
74HC2G17-Q100; 74HCT2G17-Q100
Dual non-inverting Schmitt trigger
12. Dynamic characteristics
T
amb
= 40 C to +125 C
V
OH
HIGH-level output voltage V
I
= V
T+
or V
T
; V
CC
= 4.5 V
I
O
= 20 A 4.4--V
I
O
= 4.0mA 3.7--V
V
OL
LOW-level output voltage V
I
= V
T+
or V
T
; V
CC
= 4.5 V
I
O
= 20 A--0.1V
I
O
= 4.0 mA - - 0.4 V
I
I
input leakage current V
I
= GND or V
CC
; V
CC
= 5.5 V - - 1.0 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 5.5 V
- - 20.0 A
I
CC
additional supply current V
I
= V
CC
2.1 V;
V
CC
= 4.5 V to 5.5 V; I
O
= 0 A
- - 410 A
Table 8. Static characteristics for 74HCT2G17 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6
.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
74HC2G17-Q100
t
pd
propagation delay nA to nY; see Figure 5
[1]
V
CC
= 2.0 V; C
L
= 50 pF - 36 115 - 140 175 ns
V
CC
= 4.5 V; C
L
= 50 pF - 12 22 - 27 34 ns
V
CC
= 6.0 V; C
L
= 50 pF - 10 18 - 22 28 ns
t
t
transition time nY; see Figure 5
[2]
V
CC
= 2.0 V; C
L
= 50 pF - 20 75 - 95 110 ns
V
CC
= 4.5 V; C
L
= 50 pF - 7 15 - 19 22 ns
V
CC
= 6.0 V; C
L
= 50 pF - 5 13 - 16 19 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
[3]
-10- - - -pF
74HC_HCT2G17_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 22 May 2013 8 of 19
NXP Semiconductors
74HC2G17-Q100; 74HCT2G17-Q100
Dual non-inverting Schmitt trigger
[1] t
pd
is the same as t
PLH
and t
PHL
[2] t
t
is the same as t
TLH
and t
THL
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
13. Waveforms
74HCT2G17-Q100
t
pd
propagation delay nA to nY; see Figure 5
[1]
V
CC
= 4.5 V; C
L
= 50 pF - 21 29 - 36 45 ns
t
t
transition time nY; see Figure 5
[2]
V
CC
= 4.5 V; C
L
= 50 pF - 6 15 - 19 22 ns
C
PD
power dissipation
capacitance
V
I
= GND to V
CC
1.5 V
[3]
-10- - - - pF
Table 9. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
Measurement points are given in Table 10.
V
OL
and V
OH
are typical voltage output levels that occur with the output load.
Fig 5. The data input (nA) to output (nY) propagation delays and output transition times
001aaf302
V
I
nA input
t
PLH
V
M
90 % 90 %
10 % 10 %
V
M
t
PHL
t
TLH
t
THL
GND
V
OH
nY output
V
OL
Table 10. Measurement points
Type Input Output
V
M
V
I
t
r
= t
f
V
M
74HC2G17-Q100 0.5V
CC
GND to V
CC
6.0 ns 0.5V
CC
74HCT2G17-Q100 1.3 V GND to 3.0 V 6.0 ns 1.3 V
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74HC2G17GW-Q100H

Mfr. #:
Buy 74HC2G17GW-Q100H
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers Dual non-inverting Schmitt trigge
Lifecycle:
New from this manufacturer.
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