Z0107MARLRPG

© Semiconductor Components Industries, LLC, 2012
January, 2012 ï Rev. 0
1 Publication Order Number:
Z0107MA/D
Z0107MA
Sensitive Gate Triacs
Series
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TOï92 package which is readily adaptable for use in
automatic insertion equipment.
Features
OneïPiece, InjectionïMolded Package
Blocking Voltage to 600 V
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C)
Commutating di/dt of 1.6 A/msec at 110°C
High Surge Current of 8 A
These are PbïFree Devices
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off-State Voltage
(T
J
= ï40 to +125°C)
(1)
Sine Wave 50 to 60 Hz, Gate Open
V
DRM,
V
RRM
600 V
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= 50°C)
I
T(RMS)
1.0 A
Peak NonïRepetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(T
C
= 110°C)
I
TSM
8.0 A
Circuit Fusing Considerations (t = 8.3 ms) I
2
t 0.35 A
2
s
Average Gate Power (T
C
= 80°C, t v 8.3 ms) P
G(AV)
1.0 W
Peak Gate Current (t v 20 ms, T
J
= +125°C)
I
GM
1.0 A
Operating Junction Temperature Range T
J
ï40 to
+125
°C
Storage Temperature Range T
stg
ï40 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
1.0 AMPERE RMS
600 VOLTS
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MT1
G
MT2
TOï92 (TOï226AA)
CASE 029
STYLE 12
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 2
Main Terminal 1
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
123
Z0
10xMA
YWW G
G
MARKING DIAGRAM
x = 3,7,9
Y= Year
WW = Work Week
G = PbïFree Package
(*Note: Microdot may be in either location)
Z0107MA
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctionïtoïCase
R
q
JC
50 °C/W
Thermal Resistance, JunctionïtoïAmbient
R
q
JA
160 °C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current T
J
= 25°C
(V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= +125°C
I
DRM
, I
RRM
ï
ï
ï
ï
5.0
500
mA
ON CHARACTERISTICS
Peak OnïState Voltage
(I
TM
= "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
V
TM
ï ï 1.56 V
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 30 W)
MT2(+), G(+)
MT2(+), G(ï)
MT2(ï), G(ï)
MT2(ï), G(+)
I
GT
0.15
0.15
0.15
0.25
ï
ï
ï
ï
5.0
5.0
5.0
7.0
mA
Latching Current (V
D
= 12 V, I
G
= 1.2 x I
GT
)
MT2(+), G(+) All Types
MT2(+), G(ï) All Types
MT2(ï), G(ï) All Types
MT2(ï), G(+) All Types
I
L
ï
ï
ï
ï
ï
ï
ï
ï
10
20
10
10
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 30 W)
MT2(+), G(+) All Types
MT2(+), G(ï) All Types
MT2(ï), G(ï) All Types
MT2(ï), G(+) All Types
V
GT
ï
ï
ï
ï
ï
ï
ï
ï
1.3
1.3
1.3
1.3
V
Gate NonïTrigger Voltage
(V
D
= 12 V, R
L
= 30 W, T
J
= 125°C)
All Four Quadrants
V
GD
0.2 ï 1.3 V
Holding Current
(V
D
= 12 Vdc, Initiating Current = 50 mA, Gate Open)
I
H
ï ï 10 mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
T
J
= 110°C, f = 250 Hz, with Snubber)
di/dt(c) 1.6 ï ï A/ms
Critical Rate of Rise of OffïState Voltage (V
D
= 67% Rated V
DRM
,
Exponential Waveform, Gate Open, T
J
= 110°C)
dv/dt
20 60 ï
V/ms
Repetitive Critical Rate of Rise of OnïState Current, T
J
= 125°C
Pulse Width = 20 ms, IPK
max
= 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt ï ï 20
A/ms
Z0107MA
http://onsemi.com
3
+ Current
+ Voltage
V
TM
I
H
Symbol Parameter
Voltage Current Characteristic of Triacs
(Bidirectional Device)
I
DRM
at V
DRM
on state
off state
I
RRM
at V
RRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 ï
V
TM
I
H
V
TM
Maximum On State Voltage
I
H
Holding Current
I
RRM
Peak Reverse Blocking Current
V
RRM
Peak Repetitive Reverse Off State Voltage
I
DRM
Peak Forward Blocking Current
V
DRM
Peak Repetitive Forward Off State Voltage
MT1
(+) I
GT
GATE
(+) MT2
REF
MT1
(ï) I
GT
GATE
(+) MT2
REF
MT1
(+) I
GT
GATE
(ï) MT2
REF
MT1
(ï) I
GT
GATE
(ï) MT2
REF
ï
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
I
GT
ï + I
GT
All polarities are referenced to MT1.
With inïphase signals (using standard AC lines) quadrants I and III are used.

Z0107MARLRPG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Triacs TRIAC 600V 1A TO-92
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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