MC100LVE222FAR2G

MC100LVE222
http://onsemi.com
7
PACKAGE DIMENSIONS
FA SUFFIX
LQFP PACKAGE
CASE 848D-03
ISSUE D
F
VIEW AA
AB
AB
VIEW Y
SECTION AB-AB
ROTATED 90° CLOCKWISE
C
L
-X-
X=L, M, N
1
13
14
26
27
39
4052
4X 13 TIPS
4X
N0.20 (0.008) H L-M N0.20 (0.008) T L-M
SEATING
PLANE
C
0.10 (0.004) T
4X q3
4X q2
S
0.05 (0.002)
0.25 (0.010)
GAGE PLANE
C2
C1
W
K
E
Z
S
L-M
M
0.13 (0.005) N
S
T
PLATING
BASE METAL
D
J
U
B V
B1
A
S
V1
A1
S1
-L-
-N-
-M-
-H-
-T-
q1
q
G
3X VIEW Y
VIEW AA
2X R R1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DATUMS -L-, -M- AND -N- TO BE DETERMINED
AT DATUM PLANE -H-.
5. DIMENSIONS S AND V TO BE DETERMINED AT
SEATING PLANE -T-.
6. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.25 (0.010) PER SIDE. DIMENSIONS A AND B DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE ‐H‐.
7. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL
NOT CAUSE THE LEAD WIDTH TO EXCEED 0.46
(0.018). MINIMUM SPACE BETWEEN
PROTRUSION AND ADJACENT LEAD OR
PROTRUSION 0.07 (0.003).
DIM
A
MIN MAX MIN MAX
INCHES
10.00 BSC 0.394 BSC
MILLIMETERS
A1 5.00 BSC 0.197 BSC
B 10.00 BSC 0.394 BSC
B1 5.00 BSC 0.197 BSC
C --- 1.70 --- 0.067
C1 0.05 0.20 0.002 0.008
C2 1.30 1.50 0.051 0.059
D 0.20 0.40 0.008 0.016
E 0.45 0.030
F 0.22 0.35 0.009 0.014
G 0.65 BSC
0.75 0.018
0.026 BSC
J 0.07 0.20 0.003 0.008
K 0.50 REF 0.020 REF
R1 0.08 0.20 0.003 0.008
S 12.00 BSC 0.472 BSC
S1 6.00 BSC 0.236 BSC
U 0.09 0.16 0.004 0.006
V 12.00 BSC 0.472 BSC
V1 6.00 BSC 0.236 BSC
W 0.20 REF 0.008 REF
Z 1.00 REF 0.039 REF
θ1
θ
θ3
θ2
07
__
12
_
07
__
0
_
0
_
--- ---
REF
12
_
REF
12
_
REF
12
_
REF
MC100LVE222
http://onsemi.com
8
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MC100LVE222FAR2G

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Manufacturer:
ON Semiconductor
Description:
IC CLK BUFFER 2:15 1.5GHZ 52LQFP
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