IRG4BC30F-SPBF

P1-P3 P4-P6 P7-P9

IRG4BC30F

4 www.irf.com

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1.0

1.5

2.0

2.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

CE

V , Collector-to-Emitter Voltage (V)

V = 15V

80µs PULSE WIDTH

GE

A

T , Junction Temperature

(

°C

)

J

I = 8.5A

I = 17A

I = 34A

C

C

C

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

S IN G LE P UL S E

(THERMAL RESPONSE)

Thermal Response (Z )

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

12

J

DM

thJC

C

0

10

20

30

40

25 50 75 100 125 150

Maximum D C Collector C urrent (A)

T , Case Temperature (°C)

C

V = 15V

GE

IRG4BC30F

www.irf.com 5

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0

400

800

1200

1600

2000

1 10 100

CE

C, Capacitance (pF)

V , Collector-to-Emitter Volta

g

e (V)

A

C

ies

C

res

C

oes

V

GE

= 0V f = 1 MHz

Cies = Cge + Cgc + Cce SHORTED

Cres = Cce

Coes = Cce + Cgc

0

4

8

12

16

20

0 102030405060

GE

V , Gate-to-Emitter Voltage (V)

g

Q , Total Gate Char

g

e (nC)

A

V = 400V

I = 17A

CE

C

1.30

1.35

1.40

1.45

1.50

0 102030405060

Total Switching Losses (mJ)

A

V = 480V

V = 15V

T = 25°C

I = 17A

R , Gate Resistance (

Ω

)

G

CC

GE

J

C

0.1

1

10

-60 -40 -20 0 20 40 60 80 100 120 140 160

Total Switching Losses (mJ)

A

T , Junction Temperature (°C)

J

R = 23

Ω

V = 15V

V = 480V

I = 8.5A

I = 17A

I = 34A

G

GE

CC

C

C

C

IRG4BC30F

6 www.irf.com

Fig. 12 - Turn-Off SOA

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0 10203040

C

Total Switching Losses (mJ)

I , Collector-to-Emitter Current

(

A

)

A

R = 23

Ω

T = 150°C

V = 480V

V = 15V

G

J

CC

GE

1

10

100

1000

1 10 100 1000

C

CE

GE

V , Collector-to-Em itter Voltage (V)

I , Collector-to-Emitter Current (A)

SAFE OPERATING AREA

V = 20V

T = 125°C

GE

J

P1-P3 P4-P6 P7-P9

IRG4BC30F-SPBF

Mfr. #:

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Manufacturer:

Infineon Technologies

Description:

IGBT Modules IGBT DISCRETES

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