Product Standards
Zener Diode
DY2J25000L
Absolute Maximum Ratings Ta = 25 °C
*1: Test method : IEC61000-4-5 ( tp = 8/20ms, Unrepeated )
*2: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm )
Solder in ( Recommended land pattern )
*3:
Electrical Characteristics Ta = 25 °C ± 3 °C
1
2. *1:
*2: Pulse Waveform
Page
Note)
Test method:IEC61000_4_2(C = 150 pF,R = 330 Ω, Contact discharge:10 times)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
Reverse current IR VR = 18.0 V
Clamping voltage
*2
VC
IPP = 9.0 A, tp = 8/20
s
Internal Connection200 mW
Electrostatic discharge
*3
ESD ±30 kV
A
Operating ambient temperature Topr -40 to °C
°C
VRM
Total power dissipation
*2
PT
+150
+85
18
Peak pulse current*1 Ipp 9
Junction temperature Tj 150
Maximum peak reverse voltage
°C
Peak pulse power*1 Ppp 450 W
Storage temperature Tstg -55 to
V
Symbol Rating Unit
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Marking Symbol:
25
Code
1. Cathode
―
Panasonic
Parameter
DY2J25000L
Silicon epitaxial planar type
For high surge protection
Capability of withstanding a high surge type
Features
y
y
High ESD
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
SMini2-F5-B
JEITA SC-90A
2. Anode
1of4
Unit: mm
Min Typ
V
Parameter Symbol Conditions
Breakdown voltage
*1
VBR IR = 1 mA
22.50
UnitMax
25.00 27.50
µA
50.0 V
10.0
VBR guaranted 20 ms after current flow.
97.0 pFTerminal capacitance Ct VR = 0 V, f = 1 MHz
1
2
2.5
1.25
0.7
1.7
0.13
0.35
0.5
2
1
