SQD50N04-5m6L
www.vishay.com
Vishay Siliconix
S15-2665-Rev. A, 09-Nov-15
1
Document Number: 63413
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) 40
R
DS(on)
() at V
GS
= 10 V 0.0056
R
DS(on)
() at V
GS
= 4.5 V 0.0070
I
D
(A) 50
Configuration Single
Package TO-252
G
D
S
Drain connected to tab
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
50
A
T
C
= 125 °C 45
Continuous Source Current (Diode Conduction)
a
I
S
50
Pulsed Drain Current
b
I
DM
200
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
33
Single Pulse Avalanche Energy E
AS
54 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
71
W
T
C
= 125 °C 23
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
50
°C/W
Junction-to-Case (Drain) R
thJC
2.1