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AMIS30660CANH6G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 10
1 Publication Order Number:
AMIS−30660/D
AMIS-30660
High Speed CAN
Transceiver
Description
The AMIS−30660 CAN transceiver is the interface between a
controller area network (CAN) protocol controller and the physical
bus and may be used in both 12 V and 24 V systems. The transceiver
provides differential transmit capability to the bus and differential
receive capability to the CAN controller.
Due to the wide common−mode voltage range of the receiver inputs,
the AMIS−30660 is able to reach outstanding levels of
electromagnetic susceptibility (EMS). Similarly, extremely low
electromagnetic emission (EME) is achieved by the excellent
matching of the output signals.
Features
• Fully Compatible with the ISO 11898−2 Standard
• Certified “Authentication on CAN Transceiver Conformance (d1.1)”
• High Speed (up to 1 Mbit/s)
• Ideally Suited for 12 V and 24 V Industrial and Automotive
Applications
• Low EME Common−Mode Choke is No Longer Required
• Differential Receiver with Wide Common−Mode Range ($35 V) for
High EMS
• No Disturbance of the Bus Lines with an Unpowered Node
• Transmit Data (TxD) Dominant Time−out Function
• Thermal Protection
• Bus Pins Protected Against Transients in an Automotive
Environment
• Silent Mode in which the Transmitter is Disabled
• Short Circuit Proof to Supply Voltage and Ground
• Logic Level Inputs Compatible with 3.3 V Devices
• These are Pb−Free Devices*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
PIN ASSIGNMENT
(Top View)
5
6
7
8
1
2
3
4
TxD
RxD
S
GND
CANL
CANH
AMIS−
30660
PC20040918.3
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
V
CC
V
ref
1
8
30660−2
ALYW
G
1
8
30660−2 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
MARKING
DIAGRAM
SOIC−8
CASE 751
AMIS−30660
http://onsemi.com
2
Table 1. TECHNICAL CHARACTERISTICS
Symbol Parameter Conditions Min Max Unit
V
CANH
DC Voltage at Pin CANH 0 < V
CC
< 5.25 V; No Time Limit −45 +45 V
V
CANL
DC Voltage at Pin CANL 0 < V
CC
< 5.25 V; No Time Limit −45 +45 V
V
o(dif)(bus_dom)
Differential Bus Output Voltage in
Dominant State
42.5 W < R
LT
< 60 W
1.5 3 V
t
pd(rec−dom)
Propagation Delay TxD to RxD See Figure 6 70 245 ns
t
pd(dom−rec)
Propagation Delay TxD to RxD See Figure 6 100 245 ns
C
M−range
Input Common−Mode Range for
Comparator
Guaranteed Differential Receiver Threshold
and Leakage Current
−35 +35 V
V
CM−peak
Common−Mode Peak See Figures 7 and 8 (Note 1) −500 500 mV
V
CM−step
Common−Mode Step See Figures 7 and 8 (Note 1) −150 150 mV
1. The parameters V
CM−peak
and V
CM−step
guarantee low electromagnetic emission.
CANH
CANL
AMIS−30660
GND
RxD
V
CC
2
7
6
5
Timer
S
1
Driver
control
Thermal
shutdown
V
CC
8
4
PD20070607.1
TxD
3
V
ref
COMP
V
cc
/
2
+
Figure 1. Block Diagram
Ri
(cm)
Ri
(cm)
Table 2. PIN LIST AND DESCRIPTIONS
Pin Name Description
1 TxD Transmit data input; low input → dominant driver; internal pull−up current
2 GND Ground
3 V
CC
Supply voltage
4 RxD Receive data output; dominant transmitter → low output
5 V
REF
Reference voltage output
6 CANL Low−level CAN bus line (low in dominant mode)
7 CANH High−level CAN bus line (high in dominant mode)
8 S Silent mode control input; internal pull−down current
AMIS−30660
http://onsemi.com
3
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Min Max Unit
V
CC
Supply Voltage −0.3 +7 V
V
CANH
DC Voltage at Pin CANH 0 < V
CC
< 5.25 V;
No Time Limit
−45 +45 V
V
CANL
DC Voltage at Pin CANL 0 < V
CC
< 5.25 V;
No Time Limit
−45 +45 V
V
TxD
DC Voltage at Pin TxD −0.3 V
CC
+ 0.3 V
V
RxD
DC Voltage at Pin RxD −0.3 V
CC
+ 0.3 V
V
S
DC Voltage at Pin S −0.3 V
CC
+ 0.3 V
V
ref
DC Voltage at Pin V
REF
−0.3 V
CC
+ 0.3 V
V
tran(CANH)
Transient Voltage at Pin CANH (Note 2) −150 +150 V
V
tran(CANL)
Transient Voltage at Pin CANL (Note 2) −150 +150 V
V
esd
Electrostatic Discharge Voltage at All Pins (Note 3)
(Note 5)
−4
−500
+4
+500
kV
V
Latchup Static Latchup at All Pins (Note 4) 100 mA
T
stg
Storage Temperature −55 +155 °C
T
amb
Ambient Temperature −40 +125 °C
T
Junc
Maximum Tunction Temperature −40 +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 4. THERMAL CHARACTERISTICS
Symbol Parameter Conditions Value Unit
R
th(vj−a)
Thermal Resistance from Junction−to−Ambient in SOIC−8
Package
In Free Air 150 K/W
R
th(vj−s
) Thermal resistance from Junction−to−Substrate of Bare Die In Free Air 45 K/W
AMIS−
30660
CANH
CANL
GND
RxD
TxD
Vref
2
1
3
45
6
7
8
PC20040918.2
V
CC
S
CAN
controller
VBAT
5V−reg
IN OUT
47 nF
60 W
60 W
CAN
BUS
47 nF
60 W
60 W
V
CC
GND
Figure 2. Application Diagram
P1-P3P4-P6P7-P9P10-P10

AMIS30660CANH6G

Mfr. #:
Buy AMIS30660CANH6G
Manufacturer:
ON Semiconductor
Description:
Audio DSPs HS CAN TRANSC. 5V NIPDAU
Lifecycle:
New from this manufacturer.
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