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IRF7902TRPBF

P1-P3P4-P6P7-P9P10-P10
www.irf.com 1
07/10/06
IRF7902PbF
HEXFET
®
Power MOSFET
SO-8
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V V
GS
Max. Gate Rating
l Improved Body Diode Reverse Recovery
l Lead-Free
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
V
DSS
I
D
30V Q1
22.6m
@V
GS
= 10V
6.4A
Q2
14.4m
@V
GS
= 10V
9.7A
R
DS(on)
max
Absolute Maximum Ratings
Parameter
Q1 Max.
Q2 Max.
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
6.4 9.7
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
5.1 7.8 A
I
DM
Pulsed Drain Current
51 78
P
D
@T
A
= 25°C
Power Dissipation 1.4 2.0 W
P
D
@T
A
= 70°C
Power Dissipation 0.9 1.3
Linear Derating Factor 0.011 0.016 W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Q1 Max. Q2 Max.
Units
R
θJL
Junction-to-Drain Lead
20 20 °C/W
R
θJA
Junction-to-Ambient
90 62.5
± 20
30
-55 to + 150
PD - 97194A
IRF7902PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
Q1&Q2
30
–––
–––
V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
Q1
–––
0.023
–––
V/°C
Q2 ––– 0.025 –––
Q1 ––– 18.1 22.6
R
DS(on)
Static Drain-to-Source On-Resistance ––– 23.8 29.7
m
Ω
Q2 ––– 11.5 14.4
––– 14.9 18.7
V
GS(th)
Gate Threshold Voltage Q1&Q2 1.35 1.8 2.25 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient Q1 ––– -4.7 ––– mV/°C
Q2 ––– -5.9 –––
I
DSS
Drain-to-Source Leakage Current Q1&Q2 ––– ––– 1.0 µA
Q1&Q2 ––– ––– 150
I
GSS
Gate-to-Source Forward Leakage Q1&Q2 ––– ––– 100 nA
Gate-to-Source Reverse Leakage Q1&Q2 ––– ––– -100
gfs Forward Transconductance Q1 13 ––– ––– S
Q2 19 ––– –––
Q
g
Total Gate Charge
Q1
–––
4.6
6.9
Q2 ––– 6.5 9.8
Q
gs1
Pre-Vth Gate-to-Source Charge
Q1
–––
0.9
–––
Q1
Q2 ––– 1.4 –––
V
DS
= 15V
Q
gs2
Post-Vth Gate-to-Source Charge
Q1
–––
0.5
–––
nC
V
GS
= 4.5V, I
D
= 5.1A
Q2 ––– 0.8 –––
Q
gd
Gate-to-Drain Charge
Q1
–––
1.8
–––
Q2
Q2 ––– 2.3 –––
V
DS
= 15V
Q
godr
Gate Charge Overdrive
Q1
–––
1.4
–––
V
GS
= 4.5V, I
D
= 7.8A
Q2 ––– 2.0 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q1
–––
2.3
–––
Q2 ––– 3.1 –––
Q
oss
Output Charge
Q1
–––
3.0
–––
nC
Q2 ––– 4.4 –––
R
G
Gate Resistance Q1 ––– 3.1 4.9 Ω
Q2 ––– 3.1 4.9
t
d(on)
Turn-On Delay Time Q1 ––– 7.4 –––
Q2 ––– 6.1 –––
t
r
Rise Time Q1 ––– 8.2 ––– I
D
= 5.1A
Q2 ––– 8.6 ––– ns
t
d(off)
Turn-Off Delay Time Q1 ––– 8.4 –––
Q2 ––– 8.2 –––
t
f
Fall Time Q1 ––– 3.4 ––– I
D
= 7.8A
Q2 ––– 3.3 –––
C
iss
Input Capacitance
Q1
–––
580
–––
Q2 ––– 900 –––
C
oss
Output Capacitance
Q1
–––
130
–––
pF
Q2 ––– 190 –––
C
rss
Reverse Transfer Capacitance
Q1
–––
74
–––
Q2 ––– 86 –––
Avalanche Characteristics
Parameter Q1 Max. Q2 Max. Units
E
AS
Single Pulse Avalanche Energy
3.4
7.3
mJ
I
AR
Avalanche Current
5.1
7.8
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
Q1
–––
–––
1.7
A
(Body Diode) Q2 ––– ––– 2.5
I
SM
Pulsed Source Current
Q1
–––
–––
51
A
(Body Diode)
Q2
–––
–––
78
V
SD
Diode Forward Voltage
Q1
–––
–––
1.0
V
Q2 ––– ––– 1.0
t
rr
Reverse Recovery Time
Q1
–––
7.8
12
ns
Q2 ––– 12 18
Q
rr
Reverse Recovery Charge
Q1
–––
1.5
2.3
nC
Q2 ––– 3.1 4.7
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.4A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
Q1
V
GS
= 20V
V
GS
V
DS
= 24V, V
GS
= 0V
Conditions
Q2
Q1 T
J
= 25°C, I
F
= 5.1A,
V
DD
= 15V, di/dt = 100A/µs
T
J
= 25°C, I
S
= 5.1A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.8A, V
GS
= 0V
Q2 T
J
= 25°C, I
F
= 7.8A,
V
DD
= 15V, di/dt = 100A/µs
V
DD
= 15V, V
GS
= 4.5V
–––
V
DS
= 15V
Clamped Inductive Load
V
GS
= 0V
ƒ = 1.0MHz
Typ.
–––
V
GS
= 4.5V, I
D
= 5.1A
V
GS
= 4.5V, I
D
= 7.8A
V
DS
= 15V, I
D
= 7.8A
V
DD
= 15V, V
GS
= 4.5V
V
GS
= 10V, I
D
= 9.7A
V
DS
= V
GS
, I
D
= 25µA
V
DS
= 15V, I
D
= 5.1A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
IRF7902PbF
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Q1 - Control FET Q2 - Synchronous FET
Typical Characteristics
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics
0.1 1 10 100 100
0
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM 2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
1 2 3 4 5 6
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
≤
60µs PULSE WIDTH
1 2 3 4 5 6
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
≤
60µs PULSE WIDTH
0.1 1 10 100 100
0
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM 2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100 100
0
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM 2.5V
0.1 1 10 100 100
0
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
BOTTOM 2.5V
P1-P3P4-P6P7-P9P10-P10

IRF7902TRPBF

Mfr. #:
Buy IRF7902TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT DUAL NCh 30V 9.7A
Lifecycle:
New from this manufacturer.
Delivery:
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