2SA1721
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1721
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
• High voltage: V
CBO
= −300 V, V
CEO
= −300 V
• Low saturation voltage: V
CE (sat)
= −0.5 V (max)
• Small collector output capacitance: C
ob
= 5.5 pF (typ.)
• Complementary to 2SC4497
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−300 V
Collector-emitter voltage V
CEO
−300 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−100 mA
Base current I
B
−20 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Start of commercial production
1988-09
