1. Product profile
1.1 General description
The BGU8010 is a Low Noise Amplifier (LNA) for GNSS receiver applications, available in
a small plastic 6-pin extremely thin leadless package. The BGU8010 requires one
external matching inductor and one external decoupling capacitor.
The BGU8010 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance when jamming signals from co-existing cellular
transmitters are present. At low jamming power levels it delivers 16.1 dB gain at a noise
figure of 0.85 dB. During high jamming power levels, resulting for example from a cellular
transmit burst, it temporarily increases its bias current to improve sensitivity.
1.2 Features and benefits
Covers full GNSS L1 band, from 1559 MHz to 1610 MHz
Noise figure (NF) = 0.85 dB
Gain 16.1 dB
High input 1 dB compression point of 9 dBm
High out of band IP3
i
of 3 dBm
Supply voltage 1.5 V to 3.1 V
Optimized performance at very low supply current of 3.1 mA
Power-down mode current consumption < 1 A
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor and one supply decoupling capacitor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in a 6-pins leadless package 1.1 mm 0.9 mm 0.47 mm; 0.4 mm pitch:
SOT1230
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level of 1
1.3 Applications
LNA for GPS, GLONASS, Galileo and Compass (BeiDou) in smart phones, feature
phones, tablets, digital still cameras, digital video cameras, RF front-end modules,
complete GNSS modules and personal health applications.
BGU8010
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo
and Compass
Rev. 1 — 24 December 2013 Product data sheet
;
6
2
1
BGU8010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 24 December 2013 2 of 19
NXP Semiconductors
BGU8010
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
1.4 Quick reference data
[1] PCB losses are subtracted.
[2] f
1
= 1713 MHz; f
2
= 1851 MHz, P
i
= 20 dBm per carrier.
[3] f
1
= 1713 MHz; f
2
= 1851 MHz; P
i
= 20 dBm at f
1
; P
i
= 65 dBm at f
2
.
2. Pinning information
3. Ordering information
4. Marking
Table 1. Quick reference data
f = 1575 MHz; V
CC
= 2.85 V; P
i
<
40 dBm; T
amb
=25
C; input matched to 50
using a
6.8 nH inductor, see Figure 1
; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.5 - 3.1 V
I
CC
supply current - 3.2 - mA
G
p
power gain no jammer - 16.1 - dB
NF noise figure no jammer
[1]
-0.85- dB
P
i(1dB)
input power at 1 dB
gain compression
- 9- dBm
IP3
i
input third-order
intercept point
[2]
-3- dBm
[3]
-0- dBm
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1GND
Transparent top view
2V
CC
3RF_OUT
4GND_RF
5RF_IN
6 ENABLE
DDD

Table 3. Ordering information
Type number Package
Name Description Version
BGU8010 XSON6 plastic very thin small outline package; no leads;
6 terminals; body 1.1 0.9 0.47 mm
SOT1230
OM7822 EVB BGU8010 evaluation board, MMIC only -
Table 4. Marking codes
Type number Marking code
BGU8010 B
BGU8010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 24 December 2013 3 of 19
NXP Semiconductors
BGU8010
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
5. Limiting values
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 1.
[2] Warning: due to internal ESD diode protection, the applied DC voltage shall not exceed
V
CC
+0.6 V and shall not exceed 5.0 V in order
to avoid excess current.
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.
6. Recommended operating conditions
7. Thermal characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Absolute Maximum Ratings are given as Limiting Values of stress conditions during operation, that must not be exceeded
under the worst probable conditions.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage
[1]
0.5 +5.0 V
V
I(ENABLE)
input voltage on pin ENABLE V
I(ENABLE)
< V
CC
+ 0.6 V
[1][2]
0.5 +5.0 V
V
I(RF_IN)
input voltage on pin RF_IN DC, V
I(RF_IN)
< V
CC
+0.6 V
[1][2][3]
0.5 +5.0 V
V
I(RF_OUT)
input voltage on pin RF_OUT DC, V
I(RF_OUT)
< V
CC
+ 0.6 V
[1][2][3]
0.5 +5.0 V
P
i
input power f =1575 MHz
[1]
-10dBm
P
tot
total power dissipation T
sp
130 C-55mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001
- 2kV
Charged Device Model (CDM) According to
JEDEC standard JESD22-C101
- 1kV
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.5 - 3.1 V
T
amb
ambient temperature 40 +25 +85 C
V
I(ENABLE)
input voltage on pin ENABLE OFF state - - 0.3 V
ON state 0.8 - - V
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 225 K/W

BGU8010,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BGU8010/XSON6///REEL 7 Q1 NDP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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