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VSSC8L45-M3/57T

P1-P3P4-P4
VSSC8L45-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Mar-14
1
Document Number: 87793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS-compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
8.0 A
V
RRM
45 V
I
FSM
140 A
V
F
at I
F
= 8.0 A (T
A
= 125 °C) 0.39 V
T
J
max. 150 °C
Package DO-214AB (SMC)
Diode variation Single die
DO-214AB (SMC)
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSC8L45 UNIT
Device marking code 8L45
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward current
I
F
(1)
8.0
A
I
F
(2)
4.9
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
140 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VSSC8L45-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Mar-14
2
Document Number: 87793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
Free air, mounted on recommended PCB 2 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Units mounted on 3 cm x 3 cm Aluminum, 2 oz. pad area; thermal resistance R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 4.0 A
T
A
= 25 °C
V
F
(1)
0.42 -
V
I
F
= 8.0 A 0.48 0.56
I
F
= 4.0 A
T
A
= 125 °C
0.32 -
I
F
= 8.0 A 0.39 0.48
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
-1.85
mA
T
A
= 125 °C 13 40
Typical junction capacitance 4.0 V, 1 MHz C
J
1216 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSC8L45 UNIT
Typical thermal resistance
R
JA
(1)
70
°C/W
R
JM
(2)
8
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSC8L45-M3/57T 0.235 57T 850 7" diameter plastic tape and reel
VSSC8L45-M3/9AT 0.235 9AT 3500 13" diameter plastic tape and reel
0
1
2
3
4
5
6
7
8
9
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Ambient Temperature (°C) (D=duty cycle=0.5)
Mounted on Recommended
Copper Pad Area (R
θJA
= 70 °C/W
Mounted on Al PCB, R
θJM
= 8 °C/W
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 1 2 3 4 5 6 7 8 9
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T t
p
T
VSSC8L45-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Mar-14
3
Document Number: 87793
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150
°C
T
A
= 25
°C
T
A
= 100
°C
T
A
= 125
°
C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
P1-P3P4-P4

VSSC8L45-M3/57T

Mfr. #:
Buy VSSC8L45-M3/57T
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 8A,45V,TRENCH SKY RECT.
Lifecycle:
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