OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI4948BEY-T1-GE3

P1-P3P4-P6P7-P9
Vishay Siliconix
Si4948BEY
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
www.vishay.com
1
Dual P-Channel 60-V (D-S) 175° MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 60
0.120 at V
GS
= - 10 V
- 3.1
0.150 at V
GS
= - 4.5 V
- 2.8
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4948BEY-T1-E3 (Lead (Pb)-free)
Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFE
T
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 3.1 - 2.4
A
T
A
= 70 °C
- 2.6 - 2.0
Pulsed Drain Current (10 µs Pulse Width)
I
DM
- 25
Continuous Source Current (Diode Conduction)
a
I
S
- 2 - 1.1
Avalanche Current
L = 0.1 mH
I
AS
15
Single Pulse Avalanche Energy
E
AS
11 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.4 1.4
W
T
A
= 70 °C
1.7 0.95
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
53 62.5
°C/W
Steady State 85 110
Maximum Junction-to-Foot Steady State
R
thJF
30 37
www.vishay.com
2
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
Vishay Siliconix
Si4948BEY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 60 V, V
GS
= 0 V
- 1
µA
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 70 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 10 V
- 25 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 3.1 A
0.100 0.120
Ω
V
GS
= - 4.5 V, I
D
= - 0.2 A
0.126 0.150
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 3.1 A
8.5 S
Diode Forward Voltage
a
V
SD
I
S
= - 2 A, V
GS
= 0 V
- 0.8 - 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 3.1 A
14.5 22
nCGate-Source Charge
Q
gs
2.2
Gate-Drain Charge
Q
gd
3.7
Gate Resistance
R
g
f = 1 MHz 14 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 30 V, R
L
= 30 Ω
I
D
≅ - 1 A, V
GEN
= - 10 V, R
g
= 6 Ω
10 15
ns
Rise Time
t
r
15 22
Turn-Off Delay Time
t
d(off)
50 75
Fall Time
t
f
35 55
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 2 A, dI/dt = 100 A/µs
30 50
Output Characteristics
0
5
10
15
20
25
012345678
V
GS
= 10 V thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
4 V
Transfer Characteristics
0
5
10
15
20
25
0123456
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
www.vishay.com
3
Vishay Siliconix
Si4948BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 5 10 15 20 25
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10
V
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
= 30 V
I
D
= 3.1 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
20
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
0 102030405060
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V
I
D
= 3.1 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0246810
I
D
= 3.1 A
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
- On-Resistance (Ω)
P1-P3P4-P6P7-P9

SI4948BEY-T1-GE3

Mfr. #:
Buy SI4948BEY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -60V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet