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RMB4S-E3/45

P1-P3P4-P4
RMB2S, RMB4S
www.vishay.com
Vishay General Semiconductor
Revision: 19-Aug-13
1
Document Number: 88705
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Fast Recovery
Surface Mount Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Fast recovery, low switching loss
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: TO-269AA (MBS)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Notes
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2)
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
PRIMARY CHARACTERISTICS
I
F(AV)
0.5 A
V
RRM
200 V, 400 V
I
FSM
30 A
t
rr
150 ns
V
F
at I
F
= 0.4 A 1.25 V
T
J
max. 150 °C
Package TO-269AA (MBS)
Diode variations Quad
~
~
TO-269AA (MBS)
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL RMB2S RMB4S UNIT
Device marking code 2R 4R
Maximum repetitive peak reverse voltage V
RRM
200 400 V
Maximum RMS voltage V
RMS
140 280 V
Maximum DC blocking voltage V
DC
200 400 V
Maximum average forward output
rectified current at T
A
= 30 °C
on glass-epoxy PCB
(1)
I
F(AV)
0.5
A
on aluminum substrate
(2)
0.8
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Rating for fusing (t < 8.3 ms) I
2
t5.0A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
RMB2S, RMB4S
www.vishay.com
Vishay General Semiconductor
Revision: 19-Aug-13
2
Document Number: 88705
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2)
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RMB2S RMB4S UNIT
Maximum instantaneous forward
voltage per diode
I
F
= 0.4 A V
F
1.25 V
Maximum DC reverse current at rated DC blocking
voltage per diode
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 100
Maximum reverse recovery time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
150 ns
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
13 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL RMB2S RMB4S UNIT
Typical thermal resistance
(1)
R
JA
(1)
85
°C/W R
JA
(2)
70
R
JL
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
RMB4S-E3/45 0.22 45 100 Tube
RMB4S-E3/80 0.22 80 3000 13" diameter paper tape and reel
0
20
40
60
80
100
120
140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass Epoxy PCB
Average Forward Rectified Current (A)
Ambient Temperature (°C)
Resistive or Inductive Load
1
10
100
0
5
10
15
20
25
30
35
f = 60 Hz
f = 50 Hz
T
A
= 40 °C
Single Half Sine-Wave
Number of Cycles
Peak Forward Surge Current (A)
1.0 Cycle
RMB2S, RMB4S
www.vishay.com
Vishay General Semiconductor
Revision: 19-Aug-13
3
Document Number: 88705
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 150 °C
T
J
= 25 °C
0
20
40
60
80
100
0.01
0.1
10
100
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
1
0.1
1
10
100
0
5
10
15
20
25
30
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.029 (0.74)
0.017 (0.43)
0 to 8°
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.252 (6.40)
0.272 (6.90)
0.106 (2.70)
0.090 (2.30)
0.0075 (0.19)
0.0065 (0.16)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.144 (3.65)
0.161 (4.10)
0.205 (5.21)
0.195 (4.95)
0.114 (2.90)
0.094 (2.40)
0.038 (0.96)
0.019 (0.48)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.023 MIN.
(0.58 MIN.)
0.105 (2.67)
0.095 (2.41)
TO-269AA (MBS)
Mounting Pad Layout
P1-P3P4-P4

RMB4S-E3/45

Mfr. #:
Buy RMB4S-E3/45
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 400 Volt 0.5 Amp 30 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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