OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTMD2C02R2G

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1 Publication Order Number:
NTMD2C02R2/D
NTMD2C02R2
Preferred Device
Power MOSFET
2 Amps, 20 Volts
Complementary SOIC−8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
Features
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SOIC−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Mounting Information for SOIC−8 Package Provided
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted) (Note 1)
Rating Symbol Value Unit
Drain−to−Source Voltage
N−Channel
P−Channel
V
DSS
20
20
Vdc
Gate−to−Source Voltage V
GS
±12 Vdc
Drain Current − Continuous N−Channel
P−Channel
− Pulsed N−Channel
P−Channel
I
D
I
DM
5.2
3.4
48
17
A
Operating and Storage Temperature Range T
J
and
T
stg
−55 to
150
°C
Total Power Dissipation @ T
A
= 25°C
(Note 2)
P
D
2.0 W
Thermal Resistance − Junction to Ambient
(Note 2)
R
JA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds.
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
2 AMPERES
20 VOLTS
R
DS(on)
= 43 mW (N−Channel)
R
DS(on)
= 120 mW (P−Channel)
Device Package Shipping
†
ORDERING INFORMATION
NTMD2C02R2 SOIC−8 2500/Tape & Reel
D
S
G
P−Channel
D
S
G
N−Channel
SOIC−8
CASE 751
STYLE 14
MARKING DIAGRAM &
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
D2C02 = Specific Device Code
x = Blank or S
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
D2C02x
AYWW G
G
1
8
1
8
NS NG PS PG
ND ND PD PD
NTMD2C02R2G SOIC−8
(Pb−Free)
2500/Tape & Reel
NTMD2C02R2SG SOIC−8
(Pb−Free)
2500/Tape & Reel
http://onsemi.com
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
NTMD2C02R2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Note 3)
Characteristic Symbol Polarity Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
V
(BR)DSS
(N)
(P)
20
20
−
−
−
−
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 20 Vdc)
(V
GS
= 0 Vdc, V
DS
= 12 Vdc)
I
DSS
(N)
(P)
−
−
−
−
1.0
1.0
Adc
Gate−Body Leakage Current
(V
GS
= ± 12 Vdc, V
DS
= 0)
I
GSS
− − − 100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
V
GS(th)
(N)
(P)
0.6
0.6
0.9
0.9
1.2
1.2
Vdc
Drain−to−Source On−Resistance
(V
GS
= 4.5 Vdc, I
D
= 4.0 Adc)
(V
GS
= 4.5 Vdc, I
D
= 2.4 Adc)
R
DS(on)
(N)
(P)
−
0.07
0.028
−
0.043
0.1
Drain−to−Source On−Resistance
(V
GS
= 2.7 Vdc, I
D
= 2.0 Adc)
(V
GS
= 2.7 Vdc, I
D
= 1.2 Adc)
R
DS(on)
(N)
(P)
−
0.1
0.033
−
0.048
0.13
Forward Transconductance
(V
DS
= 2.5 Vdc, I
D
= 2.0 Adc)
(V
DS
= 2.5 Vdc, I
D
= 1.0 Adc)
g
FS
(N)
(P)
3.0
3.0
6.0
4.75
−
−
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
(N)
(P)
−
−
785
540
1100
750
pF
Output Capacitance
C
oss
(N)
(P)
−
−
210
215
450
325
Transfer Capacitance
C
rss
(N)
(P)
−
−
75
100
180
175
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(V
DD
= 16 Vdc, I
D
= 4.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0 )
(V
DD
= 10 Vdc, I
D
= 1.2 Adc,
V
GS
= 2.7 Vdc,
R
G
= 6.0 )
t
d(on)
(N)
(P)
−
−
11
15
18
−
ns
Rise Time t
r
(N)
(P)
−
−
35
40
65
−
Turn−Off Delay Time t
d(off)
(N)
(P)
−
−
45
35
75
−
Fall Time t
f
(N)
(P)
−
−
60
35
110
−
Turn−On Delay Time
(V
DS
= 16 Vdc, I
D
= 6.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0 )
(V
DS
= 10 Vdc, I
D
= 2.4 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0 )
t
d(on)
(N)
(P)
−
−
12
10
20
20
Rise Time t
r
(N)
(P)
−
−
50
35
90
65
Turn−Off Delay Time t
d(off)
(N)
(P)
−
−
45
33
75
60
Fall Time t
f
(N)
(P)
−
−
80
29
130
55
Total Gate Charge
(V
DS
= 10 Vdc, I
D
= 4.0 Adc,
V
GS
= 4.5 Vdc)
(V
DS
= 6.0 Vdc, I
D
= 2.0 Adc,
V
GS
= 4.5 Vdc)
Q
T
(N)
(P)
−
−
12
10
20
18
nC
Gate−Source Charge Q
1
(N)
(P)
−
−
1.5
1.5
−
−
Gate−Drain Charge
Q
2
(N)
(P)
−
−
4.0
5.0
−
−
Q
3
(N)
(P)
−
−
3.0
3.0
−
−
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
NTMD2C02R2
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS − continued (T
A
= 25°C unless otherwise noted) (Note 6)
Characteristic Symbol Polarity Min Typ Max Unit
SOURCE−DRAIN DIODE CHARACTERISTICS (T
C
= 25°C)
Forward Voltage (Note 7) (I
S
= 4.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.4 Adc, V
GS
= 0 Vdc)
V
SD
(N)
(P)
−
−
0.83
0.88
1.1
1.0
Vdc
Reverse Recovery Time
(I
F
= I
S
,
dI
S
/dt = 100 A/s)
t
rr
(N)
(P)
−
−
30
37
−
−
ns
t
a
(N)
(P)
−
−
15
16
−
−
t
b
(N)
(P)
−
−
15
21
−
−
Reverse Recovery Stored Charge Q
RR
(N)
(P)
−
−
0.02
0.025
−
−
C
6. Negative signs for P−Channel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
N−Channel P−Channel
Figure 2. On−Region Characteristics
Figure 3. Transfer Characteristics
Figure 4. Transfer Characteristics
2.5 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
8
6
2
1.751.51.2510.750.50.250
I
D
, DRAIN CURRENT (AMPS)
0
T
J
= 25°C
1.8 V
2.0 V
V
GS
= 1.5 V
10 V
4
10
4.5 V
3.2 V
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.521.510.5
12
8
6
4
2
0
I
D
, DRAIN CURRENT (AMPS)
V
DS
≥ 10 V
T
J
= −55°C
25°C
100°C
10
V
GS
= −1.5 V
V
GS
= −1.7 V
V
GS
= −1.9 V
V
GS
= −10 V
V
GS
= −4.5 V
V
GS
= −2.5 V
V
GS
= −2.1 V
T
J
= 25°C
0
4
3
6
2
1
0
84210
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
T
J
= 55°C
T
J
= 25°C
T
J
= 100°C
V
DS
≥ −10 V
1
5
4
1.5 2
3
2
0
3
1
2.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
P1-P3P4-P6P7-P9P10-P12

NTMD2C02R2G

Mfr. #:
Buy NTMD2C02R2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 5.2A Complementary
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet